cryscore

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SILICON ON SAPPHIRE

https://www.cryscore.com/silicon-on-sapphire.html

A Brief Introduction of Silicon on Sapphire Technology

Silicon on sapphire (SOS) technology is a hetero-epitaxial process for metal-oxide-semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 µm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used.

 The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates. The advantage of sapphire is that it is an excellent electrical insulator, preventing stray currents caused by radiation from spreading to nearby circuit elements. SOS faced early challenges in commercial manufacturing because of difficulties in fabricating the very small transistors used in modern high-density applications.

 This is because the SOS process results in the formation of dislocations, twinning and stacking faults from crystal lattice disparities between the sapphire and silicon. Additionally, there is some aluminum, a p-type dopant, contamination from the substrate in the silicon closest to the interface.

 Why is Silicon on Sapphire Technology So Important to Integrated Circuit

Due to sapphire has high permittivity that can eliminate the interaction between components of the integrated circuit, not only can reduce leakage current and parasitic capacitance, enhance radiation resistance and reduce power consumption but also can improve the level of integration and two-layer wiring, thus, sapphire is the ideal material for large scale and very large scale integrated circuit.

 Silicon on sapphire technology provides ideal isolation and reduces the parasitic capacitance at the bottom of the PN junction, so it is suitable for high-speed large scale integrated circuits to achieve high speed and low power consumption. This process is generally used to make CMOS circuits.

 In addition, in the SOS microelectronic circuit design and production, all kinds of semiconductor devices usually need to make on the structural integrity silicon thin film, and because thermal expansion coefficient of silicon is similar to sapphire, a silicon monocrystalline film (100) can be grown on the surface orientation(1-102) of the sapphire substrate by heteroepitaxy.

 At present, sapphire crystal has become a widely used substrate for the growth of semiconductor materials.

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STANDARD SAPPHIRE WAFERS (C-PLANE)

https://www.cryscore.com/products/standard-sapphire-wafers/

CRYSCORE can offer Epi-Ready grade sapphire wafer with a very low surface roughness in complete orientation options.

 C-plane(0001) sapphire wafers are being extensively used for epitaxial growth of III-V and II-VI compounds, such as gallium nitride (GaN), aluminum nitride (AlN), for bright blue and green LED and laser diodes.

 Technical Applications of Standard Sapphire Wafers

C-plane sapphire wafers are widely used to grow III-V and II-VI deposited films of wide band-gap nitride and oxide semiconductor materials such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), zinc oxide (ZnO ultraviolet light emission) and tin oxide (SnO2 ultraviolet luminescent material), etc.

 In addition, standard C-plane(0001) sapphire wafers are widely applied to fabricate LED white and blue light, ultraviolet and deep UV LED epitaxial wafers by Metal-Organic Vapor Deposition(MOCVD), Molecular Beam Epitaxy (MBE), Plasma Enhanced Chemical Vapor Deposition(PECVD) and other epitaxy growth methods.

 CRYSCORE standard sapphire wafers also are used as the substrates of heterojunction bipolar transistor (HBT), a laser diode (LD), UV detector, nanotube, and the heat dissipation material of high temperature and high power high-frequency electronic device.

 Competitive Advantages of CRYSCORE's Sapphire Wafers

99.999 % high purity single crystal Al2O3 material.

Special CMP (Chemical Mechanical Polishing) technology to ensure its performance at a low cost.

Excellent surface quality in all orientations (less than 0.2 nm for C-plane, less than 0.5 nm for A-plane, M-plane, R-plane, N-plane, V-plane, 10-14, etc.)

Cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm.

25 pcs a pack or single pack is available to maximize customer flexibility in their research.

Traceable product serial number.

Compact carton packaging for safer shipping and cost-saving.

Standard wafers are Generally in stock to ensure a quick delivery.

As a professional sapphire wafer supplier, CRYSCORE aims to provide customers with the best products and services, and let our technology benefits the world.

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SAPPHIRE WINDOWS

https://www.cryscore.com/products/sapphire-windows/

Sapphire has a wide transmission range, spanning the three wavelength bands of ultraviolet, visible light and infrared and has high thermal shock resistance, high hardness and wear resistance. Almost no substance except the diamond can produce scratches on its surface, and its chemical properties are stable which is insoluble in most acid solutions. Furthermore, because of its high strength, windows made of sapphire are thinner.

 A high grade of sapphire would have little or no light scatter or lattice distortion and be used mainly for the most demanding optical applications. CRSYCORE is a professional sapphire windows supplier who uses optical grade one single crystal material to ensure its high quality. Our sapphire optical windows have been polished to surface quality of 10/5 scratch-dig, and the surface roughness is lower than 0.2 nm (for C-plane). Both coated and uncoated sapphire windows can be provided. Besides, we supply custom sapphire windows with any size and thickness in complete orientations.

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LED SUBSTRATES

https://www.cryscore.com/led-substrates.html

LED remains the dominant sapphire application. Sapphire substrates are ideal for use in LED applications due to high-temperature resistance, high strength, good electrical insulation, and low dielectric loss. Sapphire substrate in LED lighting helps prevent stray currents caused by radiation from spreading to nearby circuit elements. Its crystal structure also allows LED lights to have a wider beam angle.

 The Development of Wafers in the Led Industry

In the past, 2 to 4-inch sized wafers were commonplace, but there has been a recent transition towards 6 to 8-inch wafers. Larger sized wafer allows manufactures to incorporate more LED chips along the outside edge, increasing the brightness of the LEDs. The use of patterned sapphire substrate (PSS) can further increase brightness due to the reduction in density of the GaN layer and enhancement of light extraction efficiency. With the penetration rate for LED-based general lighting continuing to rise, large-sized PSS will become necessary to meet the demands of the rapidly growing lighting market.

 As the sapphire substrate is still a key building block for LEDs, general lighting is expected to continue providing solid demand for substrate material from the LED industry in the following years.

 LED (Light Emitting Diode) has been widely regarded as the main lighting tool of the next generation. Compared with the incandescent lamps currently used, LEDs have the advantages of long life, energy-saving, and safety. The preparation of blue LEDs needs to rely on GaN films. There are many substrate materials used for growing GaN films, such as sapphire and SiC are the most commonly used.

In recent years, sapphire has become the best and most commonly used substrate material, because of its small lattice mismatch coefficient with GaN and good light transmission. The lattices of the single-crystal sapphire substrate and GaN can match each other, and sapphire has good high-temperature stability and mechanical properties which can meet the requirements of high-temperature resistance during the growth of GaN film.

 Moreover, a single-crystal sapphire substrate has better light transmission in the visible range. In addition, there is more research regarding GaN film on sapphire, the production technology of GaN on sapphire is relatively mature and the price is relatively cheap, so single-crystal sapphire has become the key substrate material for making white, blue, green, and blue-green GaN substrates.

 Factors Must Be Considered when Evaluating Substrate Materials

1. The degree of structural matching between the substrate and the epitaxial film: the crystal structure of the epitaxial material and the substrate material are the same or similar, the lattice constant mismatch is small, the crystallization performance is good, and the defect density is low.

 2. The degree of thermal expansion coefficient matching between the substrate and the epitaxial film. The matching of the thermal expansion coefficient is very important. The thermal expansion coefficient of the epitaxial film and the substrate material is too large and may reduce the quality of the epitaxial film. Therefore, during the device operation, due to heat generation, This can cause device damage.

 3. The degree of matching the chemical stability of the substrate and the epitaxial film: the substrate material must have good chemical stability, not be easily decomposed and corroded in the temperature and atmosphere of epitaxial growth, and the quality of the epitaxial film cannot be caused by the chemical reaction with the epitaxial film decline.

 4. Difficulty and cost of material preparation: Considering the needs of industrialization development, the preparation of substrate materials requires conciseness, the cost should not be high, and the substrate size is generally not less than 2 inches.

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GAN ON SAPPHIRE

https://www.cryscore.com/gan-on-sapphire.html

Brief Introduction of GaN

GaN is the major material used for blue-light/green-light LED due to its ability to combine electrical parts and LED optical parts, increasing LED product efficiency.

 The GaN-based LEDs grown on the sapphire substrate have current transport along the lateral direction due to the insulating nature of the substrate. In addition, the finite resistance of the n-type GaN buffer layer causes the p–n junction current to be nonuniform and crowds near the edge of the contact.

 The most frequently chosen crystallographic planes have been the R-plane, C-plane, and A-plane of sapphire. The tremendous mismatch between the lattices of GaN and sapphires can be partly overcome by the use of thin buffer layers of AlN or GaN. In spite of the lattice-matching problem, many useful optoelectronic and electronic devices can be made.

 Characteristics and Applications of GaN

GaN is the third-generation semiconductor material after silicon and gallium arsenide. Its wide-bandgap characteristics make that GaN is an ideal material for blue light output. In addition, GaN also has a small dielectric constant, excellent thermal conductivity and thermal stability, which can meet the requirements of high frequency, high temperature, high pressure and high power applications.

 These properties make GaN in aerospace, satellite communications, storage display, new type Light source and nuclear energy development have a wide range of application prospects. However, the bottleneck that once limited the application of GaN was the growth process of GaN, and the key to the growth process was the choice of substrate materials.

 Although there is a large lattice fit between the sapphire crystal and the GaN crystal, the crystal structures of the two are the same, and the sapphire still maintains stable chemical properties at high temperatures. In addition, for its excellent heat dissipation performance, sapphire wafer can be used as GaN Ideal substrate material for growth processes. Growing GaN on a sapphire substrate is easy to obtain large-size epitaxial wafers, and the price is relatively cheap.

 With the development and improvement of molecular beam epitaxy and chemical vapor deposition growth technology, the quality of epitaxially growing GaN crystals on sapphire is getting higher and higher.

 If you are interested in our products, contact us now to get more info about the price of sapphire wafer and sapphire substrate.

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STANDARD SAPPHIRE WAFERS (C-PLANE)

https://www.cryscor.com/products/standard-sapphire-wafers/

CRYSCORE can offer Epi-Ready grade sapphire wafer with a very low surface roughness in complete orientation options.

 C-plane(0001) sapphire wafers are being extensively used for epitaxial growth of III-V and II-VI compounds, such as gallium nitride (GaN), aluminum nitride (AlN), for bright blue and green LED and laser diodes.

  Technical Applications of Standard Sapphire Wafers

C-plane sapphire wafers are widely used to grow III-V and II-VI deposited films of wide band-gap nitride and oxide semiconductor materials such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), zinc oxide (ZnO ultraviolet light emission) and tin oxide (SnO2 ultraviolet luminescent material), etc.

 In addition, standard C-plane(0001) sapphire wafers are widely applied to fabricate LED white and blue light, ultraviolet and deep UV LED epitaxial wafers by Metal-Organic Vapor Deposition(MOCVD), Molecular Beam Epitaxy (MBE), Plasma Enhanced Chemical Vapor Deposition(PECVD) and other epitaxy growth methods.

 CRYSCORE standard sapphire wafers also are used as the substrates of heterojunction bipolar transistor (HBT), a laser diode (LD), UV detector, nanotube, and the heat dissipation material of high temperature and high power high-frequency electronic device.

 Competitive Advantages of CRYSCORE's Sapphire Wafers

99.999 % high purity single crystal Al2O3 material.

Special CMP (Chemical Mechanical Polishing) technology to ensure its performance at a low cost.

Excellent surface quality in all orientations (less than 0.2 nm for C-plane, less than 0.5 nm for A-plane, M-plane, R-plane, N-plane, V-plane, 10-14, etc.)

Cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm.

25 pcs a pack or single pack is available to maximize customer flexibility in their research.

Traceable product serial number.

Compact carton packaging for safer shipping and cost-saving.

Standard wafers are Generally in stock to ensure a quick delivery.

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SAPPHIRE WINDOWS

https://www.cryscor.com/products/sapphire-windows/

Sapphire has a wide transmission range, spanning the three wavelength bands of ultraviolet, visible light and infrared and has high thermal shock resistance, high hardness and wear resistance. Almost no substance except the diamond can produce scratches on its surface, and its chemical properties are stable which is insoluble in most acid solutions. Furthermore, because of its high strength, windows made of sapphire are thinner.

 A high grade of sapphire would have little or no light scatter or lattice distortion and be used mainly for the most demanding optical applications. CRSYCORE is a professional sapphire windows supplier who uses optical grade one single crystal material to ensure its high quality. Our sapphire optical windows have been polished to surface quality of 10/5 scratch-dig, and the surface roughness is lower than 0.2 nm (for C-plane). Both coated and uncoated sapphire windows can be provided. Besides, we supply custom sapphire windows with any size and thickness in complete orientations.

 Sapphire has better light transmittance in the wavelength range of 0.20 - 5.50 μm and the infrared transmittance hardly changes with temperature.

 Square and rectangle sapphire windows are widely used in many fields, such as high-temperature infrared windows, bar code scanning windows and various optical components.

 Due to the extensive applications of sapphire in various fields, different dimensions are required. CRYSCORE can provide custom sapphire windows with any size and thickness in complete orientations.

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SAPPHIRE WAFERS / SAPPHIRE SUBSTRATES

https://www.cryscor.com/products/sapphire-wafers-sapphire-substrates/

Due to the less mismatched lattice and stable chemical and physical properties, sapphire(Al2O3) wafer is the popular substrates for III-V nitrides, superconductor and magnetic epi-film. They are widely used in GaN and thin-film epitaxial growth, silicon on sapphire, LED market and optics industry.

 CRYSCORE is a professional sapphire wafer supplier who manufactures 99.999% high purity single crystal polished sapphire wafers for epitaxy. And our sapphire (Al2O3) substrates feature excellent surface finish, which is the key LED parameter.

 If you are looking for reliable sapphire wafer suppliers, contact us now.

  FEATURES OF SINGLE CRYSTAL SAPPHIRE

1. Sapphire has a high optical transmittance, so it is widely used as microelectronic tube dielectric material, ultrasonic conduction element, waveguide laser cavity and other optical elements, as window materials for infrared military devices, space vehicles, high-intensity lasers and optical communications...

 2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so it is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing and other precision manufacturing (wear resistance), coal, gas, well detection sensors and detector windows (anti-corrosion)...

 3. Sapphire has the characteristics of electrical insulation, transparency, good thermal conductivity and high rigidity, so it can be used as the substrate material of integrated circuits, such as LED and microelectronic circuits, ultra-high-speed integrated circuit.

 CRYSCORE'S EXCELLENT SAPPHIRE WAFERS

99.999 % high purity single crystal Al2O3 material.

Special CMP (Chemical Mechanical Polishing) technology to ensure its performance at a low cost.

Excellent surface quality in all orientations (less than 0.2 nm for C-plane, less than 0.5 nm for A-plane, M-plane, R-plane, N-plane, V-plane, 10-14, etc.)

Cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm.

25 pcs a pack or single pack is available to maximize customer flexibility in their research.

Traceable product serial number.

Compact carton packaging for safer shipping and cost-saving.

Standard wafers are Generally in stock to ensure a quick delivery.

LOOK AT WHERE SAPPHIRE WAFER APPLIED

1. Semiconductor LED industry (MOCVD epitaxial GaN substrate)

 In general, C-plane sapphire is needed in this area. R-plane or M-plane mainly used to grow non-polar/semi-polar plane epitaxial layers to improve the luminescence efficiency.

 2. The growth of III-V or II-VI compound semiconductor.

 3. Microelectronic IC applications especially Very High-Speed Integrated Circuit, SOS

 Generally, it is a silicon heteroepitaxial deposition on R-plane sapphire.

 4. Hybrid microelectronics

 Hybrid microelectronics products are mainly HIC and MCM. It has high requirements on the substrate, while sapphire's characteristics such as stable dielectric constant and low dielectric loss make sapphire wafer the most commonly used substrate for HIC and the main substrate for MCM. Generally, the A-plane sapphire wafer is needed.

  SAPPHIRE WAFER PROCESSING

At the very beginning, we have a crystal boule.

 Crystal growing: Produce high-quality sapphire monocrystals via furnace.

 Sapphire ingot processing: Drill out the ingot, Ground the ingot, Quality inspection.

 Then we get the sapphire ingot.

 Orientation: Position the ingot on the sawing machine.

 Sawing: Cut the ingot into thin wafers.

 Lapping: Lap the wafer to remove the scratched layer and improve its flatness.

 Chamfer: Trim the edge of the wafer into an arc to improve the mechanical strength, to avoiding stress concentration.

 Polishing: Reduce the surface roughness to reach the epitaxial wafer grade.

 Cleaning: Remove dirt from the wafer surface.

 Quality inspection: Inspect wafer with a high precision instrument to meet customer's requests.

 Finally, we get the sapphire wafer.

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SAPPHIRE INGOTS/RODS

https://www.cryscor.com/products/sapphire-ingots-sapphire-rods.html

Sapphire ingots are typically used as raw materials for further processing. These sapphire rods and sapphire ingots are uniformly shaped, usually as cylinders. The most sapphire crystal grows in A-axis, and the most widely used sapphire substrate in the LED market is its C-plane (0001). Therefore, it is necessary to drill the c-plane sapphire ingot from the side of the crystal.

 CRYSCORE provides sapphire rods and ingots with ground surfaces for further processing and polishing. They are cored from high-grade Kyropoulos grown boules. We supply dia. 2-inch to 8-inch sapphire rod and ingot with any orientation and custom specifications. Flats are available upon request.

 Specifications of Sapphire Ingots/Rods

Item

Sapphire Ingots

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Orientation

C-plane(0001),   A-plane(11-20),  M-plane(10-10),

R-plane(1-102),  N-plane(11-23),  V-plane(22-43)

Diameter

2-inch, 4-inch, 6-inch, 8-inch, etc.

Flat

Upon request

Surface Finish

Fine Ground

Packaging

Single piece packaging

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PATTERNED SAPPHIRE SUBSTRATES

https://www.cryscor.com/products/patterned-sapphire-substrates/

Sapphire wafer is the most widely used substrate material in semiconductor lighting industry, and patterned sapphire substrate (short for PSS) is the general method to improve the luminous efficiency of semiconductor lighting devices. These sapphire substrates are with periodic structures of various shapes such as cone, dome, pyramid, and pillar, etc.

 Cryscore's Excellent Patterned Sapphire Substrates

Pattern dimension, aspect ratio, and uniformity across the wafer as well as consistency from wafer to wafer, are important factors to improve the light extraction. Currently, we provide 2-inch and 4-inch patterned sapphire substrates (PSS sapphire and wafer) with the following specifications. Diameter: 2.7 +/- 0.1 μm. Spacing: 0.3 +/- 0.1 μm. Depth: 1.7 +/- 0.15 μm.

2 Inch Patterned Sapphire Substrates

PSS is to design and manufacture specific nano-scale microstructure pattern on sapphire substrate.

 4 Inch Patterned Sapphire Substrates

Patterned Sapphire Substrates (PSS) is micro-patterned sapphire substrate used to for GaN based light emitting diodes(LEDS).

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R-PLANE (1-102) SAPPHIRE WAFERS

https://www.cryscor.com/products/r-plane-1-102-sapphire-wafers.html

R plane(1-102) sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications. R plane is the non-polar plane of sapphire. So the different positions of R-plane in sapphire devices, the mechanical, thermal, electrical and optical properties of sapphire devices will vary greatly, which will also affect the subsequent processing performance, processing efficiency and processing yield of sapphire devices.

 In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.

 Specifications of R-Plane (1-102) Sapphire Wafers

Item

2 -inch R-plane(1-102) 430μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

R-plane(1-102)

Diameter

50.8 mm +/- 0.1 mm

Thickness

430 μm +/- 25 μm

Primary Flat Orientation

45 +/- 1deg. counter-clockwise from C-axis projection on R-plane

Primary Flat Length

16.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.5 nm (by AFM)

TTV

< 10 μm

BOW

< 10 μm

WARP

< 10 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

 Note: Custom sapphire wafers with any orientation and any thickness can be provided.

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CUSTOM SAPPHIRE WINDOWS

https://www.cryscor.com/products/custom-sapphire-windows.html

Due to the extensive applications of sapphire in various fields, different dimensions are required. CRYSCORE can provide custom sapphire windows with any size and thickness in complete orientations. All of these windows are available with high-precision polished surface, surface accuracy and parallelism.

 For custom sapphire windows, we also offer various services, such as anti-reflection coatings or laser processing. We can provide custom sapphire windows with laser scribed lines as well as other sapphires with special specifications.

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M-PLANE (10-10) SAPPHIRE WAFERS

https://www.cryscor.com/products/m-plane-10-10-sapphire-wafers.html

Due to its application prospects in solar-blind ultraviolet detection, MgZnO alloy semiconductor films with suitable band gaps have attracted more and more attention. A series of MgxZn1-xO thin films with different compositions were prepared on M plane sapphire wafers by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD).

 CRYSCORE provides M plane (10-10) sapphire wafers with excellent surface quality. The roughness on the epi-polished side is lower than 0.5 nm.

 Specifications of M-Plane (10-10) Sapphire Wafers

Item

2-inch M-plane(10-10) 430μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

M-plane(11-10)

Diameter

50.8 mm +/- 0.1 mm

Thickness

430 μm +/- 25 μm

Primary Flat Orientation

C-plane(0001) +/- 0.2°

Primary Flat Length

16.0 mm +/- 1.0 mm

Single Side Polished

(SSP)

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

(DSP)

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

Back Surface

Epi-polished, Ra < 0.5 nm (by AFM)

TTV

< 10 μm

BOW

< 10 μm

WARP

< 10 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers with any orientation and any thickness can be provided.

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CUSTOM SAPPHIRE WAFERS

https://www.cryscor.com/products/custom-sapphire-wafers/

CRYSCORE supplies sapphire wafers with the high-quality surfaces in all orientations (C-plane, A-plane, R-plane, M-plane, N-plane, V-plane, 10-14, etc.) and, with a miscut if desired.

 In addition to standard dimensions and orientations, orientation offcuts and orientation flats are available to maximize customer flexibility in their research or business. All these sapphire wafers are cleaned and packed in class 100 cleanroom. They are Epi-Ready grades to meet the customers' rigorous requirements.

 A-Plane (11-20) Sapphire Wafers

A-plane(11-20) sapphire wafers have uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications.

 M-Plane (10-10) Sapphire Wafers

Due to its application prospects in solar blind ultraviolet detection, MgZnO alloy semiconductor films with suitable band gaps have attracted more and more attention.

 N-Plane (11-23) Sapphire Wafers

N-plane sapphire wafers are not as common as C-plane (0001), A-plane (11-20) or R-plane (1-102) wafers.

 R-Plane (1-102) Sapphire Wafers

R-plane(1-102) sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.

 CRYSCORE's Excellent Custom Sapphire Wafers

99.99% high purity single crystal Al2O3 material.

Special CMP technology ensures custom sapphire wafers’ high performance at low costs.

Provide all orientations for custom sapphire wafers with excellent surface quality.

Custom sapphire wafers cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm.

25 pcs a pack or single pack is available to maximize customer flexibility in their research.

Traceable product serial number.

Compact carton packaging for safer transportation and cost savings.

Standard wafers are generally in stock to ensure fast delivery.