#Linear mosfet

[drick2ckk]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/si2301cds-t1-ge3-vishay-2146383

Mosfet as a switch, mosfet transistor, High voltage translator, power transistor

P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE

[clitn2taker]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/si2301cds-t1-ge3-vishay-6369524

Transistors, Mosfets, SI2301CDS-T1-GE3, Vishay

P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE

[vrn2dberg]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfr5410trpbf-infineon-2173906

Transistor mosfet, power mosfet, mosfet gate, mosfet module, linear mosfet

Single P-Channel 100 V 0.205 Ohm 58nC HEXFET® Power Mosfet - TO-252AA

[stnve2ane]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/buk9y19-75b-115-nexperia-5046162

What does a mosfet do, audio mosfet, Digital transistors, power mosfet

BUK9Y19 Series 100 V 19 mOhm SMT N-Channel Logic Level MOSFET - LFPAK-56

[jmse2jacks]

Power management, mosfet power supply, Mosfet switch circuit

P-Channel 100 V 1.05 Ohm Surface Mount Mosfet - SOT-223

[mrcc2lvinn]

High power mosfet, amplify, mosfet switch, mosfet module

N-Channel 20 V 1 A 0.45 Ω Surface Mount Enhancement Mode Power MosFet - SOT-323

[mthw2lang]

Power mosfet, mosfet applications, transistor mosfet, linear mosfet

BSZ160N10NS3GATMA1 Single N-Channel 100 V 16 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8

[jneif3alll]

Mosfets circuits, Transistors mosfet, audio mosfet, transistor mosfet

N-Channel 20 V 1 A 0.45 Ω Surface Mount Enhancement Mode Power MosFet - SOT-323

[wrn2llder]

Mosfet transistor, high power mosfet, mosfet module, linear mosfet

IXTA32P20T Series 200 V 32 A SMT P-Channel Power Mosfet - TO-263-3

[dune2hih]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfr5410trpbf-infineon-2743227

Single P-Channel 100 V 0.205 Ohm 58nC HEXFET® Power Mosfet

[rbrt2mnnd]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/bsp125h6327xtsa1-infineon-2060212

Power mosfet, high current mosfet audio mosfet, linear mosfet, mosfet module

Single N-Channel 600 V 45 Ohm 4.5 nC SIPMOS® Power Mosfet - SOT-223

[jsm2tphr]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/bsp125h6327xtsa1-infineon-5173904

Transistor manufacturers, High voltage mosfet, mosfet gate, Mosfet transistor

Single N-Channel 600 V 45 Ohm 4.5 nC SIPMOS® Power Mosfet - SOT-223

[audio-luddite]

Solid Stuff.

Lets talk about transistors. There are many types and methods and there have been many products made with them. It is rather silly to lump them all into one bin and complain.

Transistors are actually quantum devices. They use fields and potentials and extra electrons or holes in the orbitals of solid materials. They make possible all those things we all associate with modern life. Your smart phone uses millions of transistors. Even the screen is an array of transistors controlling what you see. Such stuff would be physically impossible with vacuum tubes.

They go back pretty far you probably didn't know. Basically as old as vacuum tubes in theory. The Field effect transistor was first described in 1925 conceptually. The common Bipolar Junction type was demonstrated in 1947 and commercialized in the 1950s. The 6550 vacuum tube was also developed in the 1950s. The MOSFET was invented in 1959 and had many advantages especially in energy efficiency. All that real work was done at BELL Labs a private research lab owned by Bell Telephone.

In Audio the challenge was finding ways to control ever more power. Up until the late 1960s a powerful home amplifier was about 60 Watts. That was the best you could do with using either Tubes or Transistors. Very clever designers worked both ways. Harman Kardon and Dynaco both sold factory made and Kits of audio stuff as the interest was mostly in hobbyists. Both companies used tube and transistor methods and moved from one to the other as soon as they could. But they sold both tubes and Transistor equipment for some time.

Why did they change? They found transistors better. They liked the performance and manufacturing advantages. A stereo tube amplifier uses three big transformers. A transistor type needs one. Tube amplifiers use lethal voltages and are fragile. Transistors don't and aren't. And in the late 60s to early 70s transistors sounded better. Such was the opinion of the Original golden ear J Gordon Holt.

Tubes were "fuzzy" and obscured detail. Tubes had weak or muddy Bass. Transistors had clarity and speed and Power. One of the best amplifiers of that age was the Harman Kardon Citation 12. 60 Watts dual mono with quasi-complementary output transistors. Some people still say quasi is better than actual full complementary as you can properly match the transistors. That HK still sounds really good. Better than a newer Carver amp I have.

The age of the super amp was all transistor. SAE, Dynaco, Phase Linear all just added more transistors to the output and got 100, 200, 250, and then 350 Watts per channel. That followed the development of better transistors that could push more current and volts. People liked what they could do.

As in everything they were not perfect. Nothing is perfect. And today there is an avalanche of marketing and nonsense. This is best, that is best. Companies come and go. Old ways are rediscovered and called new.

Hey it is not over. People spend crazy money on the latest thing. It has a lot in common with joining a Cult. I refuse to drink the Kool Aid.

It took me a while to realize that it is not about best, or even better, just different. There are different things to hear. My lovely 1990s era tube amp has wonderful textures, but obscures tiny details I know are there. I miss them, but will forgive it for now.

I think I should just start calling it my winter amp. Toasty warm like a nice fire in the fireplace. It will rest in the summer, and I will get my tiny details back. Not about better.

There are obsolete technologies revived like tiny Single End Triode "Class A" amplifiers and big horn speakers. People can forgive flaws and limitations if they really want to. Hey I do. Old designs from the 1950s are recreated and people really like them. You can buy a brand new recreation of the Harman Kardon Citation I and II classic tube preamp and amp set. Just like the original only new parts. Old "Classic" equipment is lovingly restored to as new, but this returning to the roots still sounds like the 1950s. It wasn't that good people.

I have LPs that are pure analogue. Performance to professional tape to disc. They sound really good. I have LPs that were recorded digitally and they sound great too. I have really good CDs. So the newer technology is not automatically worse. Some is, but that is the production chain and often commercial pressures to "sound good on AM radio" like that Carly Simon LP I got.

You can build a justifiably high end system with transistors. It will sound great and be reliable. You do not have to apologize, and yes you can still socialize with the tube people.

[deliandiver]

Защита БП от перегрузки по току

История с разработкой моего БП продолжается. И наконец-то!!! Я добрался до подсистем защиты. В самом начале этого проекта, я предполагал, что смогу реализовать нормальное (адекватное) измерение тока через шунт, и дале, обустраивая этот узел инфраструктурой, выстрою на его основе все необходимые мне функции. Однако, то были - лишь предположения, а их итогом, становится схема (немного сырая) ниже, построенная на базе LT1910 – ИС драйвера полевого MOSFET верхнего плеча, выпускаемого компанией Linear Technology. Отмечу, что несмотря на все запреты введённые против РФ, сеть «Чип и Дип» успешно продолжает торговать продуктами LT.

MOSFET M1 отключает нагрузку от цепи питания, после достижения границы в три ампера, которая устанавлена значением шунта Rsense. Паралелльно, сигнал с вывода Fault переводит защёлку со светодиодом в работу сигнализируя об ошибке. После устранения причин вызвавших перегрузку, при нажатии на кнопку Reset (RST Switch), защелка «обнуляется», а на вывод IN подаётся высокий логический сигнал, сбрасывающий на LT1910 режим Fault. После проверки, LT1910 включает MOSFET в работу и подключает питание к нагрузке.

[edgetechindutries]

Aluminum Nitride (AlN): Ultra-Wide Bandgap (UWBG) Technology Emerging in the Power Semiconductor Industry

All semiconductors operate based on chemical doping of impurity elements. When a doping material is inserted, an n-type or p-type semiconductor can be created, depending on whether the step creates an excess of negative charge carriers, electrons, or positive charges from a shortage of electrons, called holes. Almost all successful devices on the market are sandwiched by such doped semiconductors. The original semiconductor structure is a p-n junction connecting two terminals or diodes.

There are compound semiconductors containing elements from Groups III and V of the periodic table, such as gallium nitride, that have unusual but easily exploitable properties. At the interface where two specific semiconductors meet, such as GaN and AlGaN, they can spontaneously generate a two-dimensional electron gas (2DEG) with extremely strong mobile charge carriers, even without chemical doping. Nitrogen has a higher electronegativity than gallium and aluminum, resulting in a net charge shift or electrically spontaneous polarization, i.e., different domains of opposite charge. Furthermore, mechanical stress caused by lattice mismatch can lead to additional polarization due to the piezoelectric effect. In other words, this effect creates a charge simply by tightening the crystal lattice, another form of doping called polar doping. Both types of polarization simultaneously produce a net positive charge. But to achieve charge neutrality, the same amount of negative charge pops up at the interface, which is exactly what high-conductivity 2DEG is.

AlN junction and polarization-induced (Pi) doping

The paper mentioned above was written by a team of seven co-authors, some of whom are from Nagoya University, including Hiroshi Amano, who won the 2014 Nobel Prize for the invention of blue LEDs. This article describes the realization of diodes by implementing doping-free distributed polarization technology in aluminum nitride or, more precisely, aluminum gallium nitride alloy (AlGaN) consisting of a mixture of AlN and GaN. The basic doping technology is a unique polarization-induced (Pi) doping scheme that produces high-mobility 2DEG without impurity doping. Recently a two-dimensional hole gas (2DHG) has also been reported in undoped GaN/AlN structures. In addition to generating two-dimensional carriers from polarization discontinuities at the heterojunction interface, Pi bodies with constant volume concentrations of three-dimensional electron and hole gases can also be obtained from constant polarization gradients in linear gradient structures, or distributed polar doping (DPD).

Like any other diode, this device has a p-doped region and an n-doped region or junction. Doping in both regions is achieved by a distributed polarization doping technique. Different n-type and p-type polarizations are achieved by creating a gradient in the ratio of aluminum nitride to gallium nitride in the alloy in each doping region. The biggest innovation is whether the doping is n-type or p-type, depending only on the direction of the gradient. The authors demonstrated that diodes based on aluminum nitride alloys were able to withstand electric fields of 7.3 megavolts per centimeter, approximately twice that of SiC or GaN. This value is impressive, but still far from the theoretical value of around 15MV/cm shown in Table 1.

Table 1: Physical properties of WBG and UWBG materials

Future development

After proving that AlN vertical diodes are feasible in polarization-induced doping processes, the next step is to implement vertical structure transistors to compete with SiC MOSFETs or GaN HEMTs. According to IEEE member Takeru Kumabe, a co-author of the Nagoya paper, "AlN-based vertical heterojunction bipolar transistors, consisting of two p-n junctions with good power and area efficiency, are our target devices and the dream we want to realize 1,” Kumabe added: ”To realize the dream, a better understanding of charge mobility, carrier lifetime, critical electric field and intrinsic defects is needed.”

[mthw2lang]

Power mosfet, mosfet applications, transistor mosfet, linear mosfet

BSZ160N10NS3GATMA1 Single N-Channel 100 V 16 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8