#high voltage trench MOSFETs

[futureelectronic1119]

ROHM's SiC Power and Gate Driver Solutions

https://www.futureelectronics.com/m/rohm. Optimize your designs with SiC power devices and gate drivers from ROHM, the pioneer and industry leader in SiC technology. Combining SiCproducts, such as ROHM’s new high voltage trench-type MOSFETs featuring separate driver and power source pins to minimize switching loss. https://youtu.be/eKAmcAaomFE

[vbsemi-mosfet]

Applications of VBA2412 and VB2355 MOSFETs in Vehicle Communication Control: Enhancing System Reliability and Data Transmission Security

Vehicle Communication Control The vehicle communication control system is responsible for receiving, processing, and managing various data streams within and outside the vehicle. These include driver identification, real-time vehicle status monitoring, accident information recording and transmission, remote fault diagnosis, and onboard navigation. The efficient and stable operation of vehicle communication control directly impacts vehicle safety and intelligence. In this context, MOSFETs play a crucial role in enhancing system reliability and data transmission security.

Product Specifications

VBA2412:

Operating Voltage (VDS): -40V

Maximum Tolerance Voltage (VGS): 20V

Threshold Voltage (Vth): -2V

On-Resistance at VGS=4.5V: 14mΩ

On-Resistance at VGS=10V: 10mΩ

Maximum Drain Current (ID): 16.1A

VB2355:

Polarity: Single P-Channel

VDS: -30V

Maximum Tolerance Voltage (VGS): 20V

Threshold Voltage (Vth): -1.7V

On-Resistance at VGS=4.5V: 54mΩ

On-Resistance at VGS=10V: 46mΩ

Maximum Drain Current (ID): -5.6A

Technology: Trench

Package: SOT23-3

Application Scenarios

Signal Amplification and Filtering MOSFETs can amplify weak signals, ensuring clear and interference-resistant sensor data transmission.

VBA2412: With low on-resistance (14mΩ at VGS=4.5V, 10mΩ at VGS=10V), it is suitable for high-current signal amplification, enhancing stability.

VB2355: Its higher on-resistance is ideal for low-power signals, performing well in fine data transmission.

High-Speed Switching Control MOSFETs provide rapid switching performance, ensuring real-time response in high-frequency applications.

VBA2412: Its fast response and 16.1A drain current make it suitable for high-frequency, high-power switching, ensuring data transmission in real-time.

VB2355: Designed for low-power, high-speed signal switching, it’s ideal for signal processing in small modules.

Power Management MOSFETs manage power supply according to module requirements, providing stable current and saving energy.

VBA2412: High current capacity supports power management in high-power modules.

VB2355: Performs well in energy-saving mode for small communication modules.

Overcurrent Protection MOSFETs can detect abnormal currents and quickly cut power to prevent communication module damage.

VBA2412: Suitable for overcurrent protection in high-current conditions.

VB2355: Protects low-power devices, preventing damage to small equipment.

Low Power Control MOSFETs reduce energy consumption in low-power modes, extending system standby time.

VBA2412: Ideal for sustained power supply modules with low-power performance in high-power operations.

VB2355: Extends standby time in small systems during low-power mode.

Advantages and Focus of VBA2412 and VB2355 The VBA2412 is more suitable for high-power, high-frequency applications such as signal amplification, fast switching, and overcurrent protection. The VB2355, on the other hand, excels in low-power, low-noise applications, ideal for signal isolation and low-power control. Together, they complement each other in vehicle communication control applications.

The VBA2412 and VB2355 MOSFETs provide robust support for vehicle communication control in modern intelligent connected vehicles, optimizing data processing and power management. They improve system stability and response speed, ensuring effective power and signal management and protection. These components play a crucial role in enhancing the reliability and energy efficiency of communication modules, laying a foundation for communication control in future smart vehicles.

[lanshengic]

Infineon and INFY Power join forces to expand new energy vehicle charging market

【Lansheng Technology Information】Silicon carbide-based power semiconductors have many advantages such as high efficiency, high power density, high withstand voltage and high reliability, creating opportunities to realize new applications and promote technological innovation in charging stations. Recently, Infineon Technologies AG recently announced a cooperation with INFY Power, China’s leader in the new energy vehicle charging market. Infineon will provide INFY Power with industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.

Dr. Peter Wawer, President of Infineon's Zero Carbon Industrial Power Division, said: "The cooperation between Infineon and INFY Power in the field of electric vehicle charging solutions will provide excellent system-level technology solutions for the local electric vehicle charging industry. It will Dramatically improve charging efficiency, speed up charging, and create a better user experience for electric vehicle owners."

Qiu Tianquan, President of Infineon China, said: “By cooperating with Infineon, which has been continuously improving in the field of SiC products for more than 20 years and has strong integrated technology capabilities, Infineon will use the most advanced product processes and design solutions to Continue to consolidate and maintain its technological leadership in the industry. We can also set a new benchmark for the charging efficiency of new energy vehicle DC charging solutions, thereby creating more convenience and unique value for customers and promoting the development of the electric vehicle charging industry. healthy growth."

Due to its high power density, SiC is suitable for developing high-performance, lightweight and compact charging solutions, which is particularly beneficial for superchargers and ultra-compact wall-mounted DC charging piles. SiC technology can increase the efficiency of electric vehicle charging stations by 1% compared to traditional silicon technology, thereby reducing energy consumption and operating costs. Taking a 100 kW charging station as an example, this means saving 1 kWh of electricity, saving 270 euros in annual costs, and reducing 3.5 tons of carbon emissions. This will greatly promote the application of SiC power devices in electric vehicle charging modules.

As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced advanced designs that help improve the reliability of charging solutions. These devices feature high threshold voltages and simplify gate drive. CoolSiC MOSFET technology has passed the marathon stress test and the gate voltage jump stress test before being launched on the market, and is regularly monitored after the launch to ensure the highest gate reliability.

By using Infineon's 1200 V CoolSiC MOSFET, Infineon's 30 kW DC charging module can achieve a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. This allows it to not only meet the fast charging needs of most electric vehicles, but also achieve 1% greater efficiency than other solutions on the market. This helps to significantly reduce energy consumption and carbon emissions, reaching world-leading levels.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[futureelectronic1527]

https://www.futureelectronics.com/m/rohm. Optimize your designs with SiC power devices and gate drivers from ROHM,  the pioneer and industry leader in SiC technology. Combining SiCproducts,  such as ROHM’s new high voltage trench-type MOSFETs featuring separate driver and power source pins to minimize switching loss. https://youtu.be/eKAmcAaomFE

[adsload674]

7426 Mosfet

7426 Mosfet Motor

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N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 40 V Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C ID 30 A TC = 125 °C 30 Continuous source current (diode conduction) a IS 30 Pulsed drain current b IDM 120.

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V).

Buy the best and latest aon7426 mosfet on banggood.com offer the quality aon7426 mosfet on sale with worldwide free shipping. Shopping Australia. 7426 Datasheet, 7426 PDF, 7426 Data sheet, 7426 manual, 7426 pdf, 7426, datenblatt, Electronics 7426, alldatasheet, free, datasheet, Datasheets, data sheet, datas sheets, databook, free datasheet. AM7426N N-Channel 30-V (D-S) MOSFET: Fairchild Semiconductor: DM7426N Quad 2-Input NAND Gates with High Voltage Open-Collector Outputs: Texas.

Type Designator: AON7426

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 30 V

7426 Mosfet Motor

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.35 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: DFN3X3EP

7426 Mosfet Drive

AON7426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON7426 Datasheet (PDF)

0.1. aon7426.pdf Size:274K _aosemi

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.1. aon7422e.pdf Size:352K _aosemi

AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon7421.pdf Size:267K _aosemi

7426 Mosfet Circuit

AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

7426 Mosfet Power

8.3. aon7422l.pdf Size:164K _aosemi

AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.4. aon7424.pdf Size:238K _aosemi

AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.5. aon7428.pdf Size:163K _aosemi

AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.6. aon7423.pdf Size:290K _aosemi

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.7. aon7422g.pdf Size:259K _aosemi

AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AON7412, AON7414, AON7416, AON7418, AON7421, AON7422E, AON7423, AON7424, J111, AON7428, AON7430, AON7432, AON7436, AON7440, AON7444, AON7446, AON7448.

LIST

Last Update

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

[e-energyit]

Common Power MODFET Types and Applications

The full name of MOSFET is Metal-Oxide-Semiconductor Field-Effect Transistor. i.e. Metal-Oxide-Semiconductor Field-Effect Transistor.

First of all, let's understand the application and existence of MOSFETs.

MOSFETs are present in large numbers in CPUs and are power components with low drive power, fast switching speed, high operating frequency, and strong thermal stability, so they are used as amplification circuits or switching circuits. to achieve logic functions, and the number in the CPU is very impressive.

The HUAWEI Kirin 990 5G chip, for example, has a whopping 10.3 billion transistors.

In addition to the large number of MOSFETs in highly integrated CPUs, they are widely used in sound amplification, circuit power supply, and power systems. Depending on the application of MOSFETs, there are differences in both the way they exist and how they work.

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/k7v64gtqtsbb2xwt9izk.jpg

Infineon's power MOSFETs, for example, the following figure is a 40 V StrongIRFET™ power MOSFET in D2PAK 7pin, used in high-current batteries, which are present in a discrete individual manner, the size of a single MOSFET in the order of cm, the size of a single MOSFET in the CPU in the order of nm, and the previously introduced the CPU-MOSFETs are different.

MOSFETs in different fields have different forms, and their circuits act as different roles and principles, MOSFEs in CPUs and power systems mainly act as electronic switches, and in sound amplification, MOSFETs act mainly as amplifier elements for analog signals. 

At the same time, the internal device structure of MOSFETs in small power and high-power devices are also different, in small power MOSFETs, S and D is horizontal, in high-power devices, S and D is generally vertical, so that the purpose of the design is mainly to meet the requirements of high voltage power systems.

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/i0k96swu8zslp3ms97v4.jpg

Low Power Horizontal SD MOSFET

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/bmepkq8zqci7d3hj9zoi.jpg

High Power Vertical SD MOSFET

Depending on the polarity of their "channels" (working carriers), they can be divided into two types of "N-type" and "P-type", often called NMOSFETs and PMOSFETs Other abbreviations include NMOS, PMOS, etc.

Mosfet is mainly used in high frequency and low-voltage low-power aspects, different types of MOSFET voltage performance, the range is not the same.

Currently, the mainstream power MOSFET types on the market mainly include: due to changes in technology to form the internal structure of different Planar, Trench, Lateral, SuperJunction, Advanced Trench, as well as due to material iterations of the formation of semiconductor material changes in SiC, GaN. Although material iterations and technological changes are parallel, such as the existence of GaN Lateral MOSFETs, for the time being, the performance of all available wide-band MOSFETs is mainly determined by material performance, as wide-band semiconductors are still in the initial stage of development, so all different structures of GaN MOSFETs and SiC MOSFETs are grouped into one whole. 

MOSFET TYPE

System Application Characteristics

Application Area

Planar

Low operating frequency/better voltage resistance

Voltage Regulators

Lateral

Low capacitance/high operating frequency

Audio Equipment

Trench

Low on-resistance/average voltage resistance

Switching Power Supplies

Super Junction

Improved voltage resistance and output power based on Trench

Industrial Lighting

Advanced Trench

Increase operating frequency based on Trench

Communication social security

SiC

Low power consumption / highest output power / best voltage withstand

Automotive Electronics

Gan

Good voltage withstand / high output power/ highest operating frequency

Automotive Electronics

Benefiting from the electrification of the world, information technology and the pursuit of higher performance of the electricity end-use, the global market size of power MOSFETs is expected to reach $ billion 85 in 2022. The power semiconductor industry is a demand-driven industry, so the market space for the power MOSFET industry is mainly derived from the market space for power devices with an operating frequency of 10kHz or more and an output power of 5kW or less for the industry.

Industry Type

Application Areas

Display Devices

Cameras/Audio devices

Wireless devices

Mobile phones/wearable devices

Household appliances

Washing machine/air conditioner/refrigerator

Medical Equipment

Blood glucose meter / MRI

Automotive Electronics

Motor controller/inverter

Industrial Applications

Uninterruptible power supply/solar inverter

Computing and Storage

Computer/Server/Data Center

Network Communication

Modem / Broadband network / Cellular network

The main growth drivers of these eight industries are mainly derived from three trends: the trend of electrification, the trend of information technology and the trend of the pursuit of higher performance of electricity terminals.

The electrification trend mainly affects the automotive electronics and industrial industries, the electrification of the automotive industry is undoubtedly the most significant feature of the world's electrification today, which is derived from both the automotive industry's annual global production and sales volume of nearly 100 million, but also from the automotive electrification 3-4 times the size of the power semiconductor usage growth; and industry is mainly due to the overall increase in electricity consumption brought about by electrification, thus driving including power The industry is mainly due to the electrification of the overall increase in electricity consumption, thus driving the growth of the power transmission industry, including power supplies, solar inverters, etc.

Information technology trends mainly affect wireless devices, computing storage and network communications in these three industries, in terms of future trends in the world, whether it is the Internet of Things or AI, in essence, are inseparable from a greater degree of data collection, computing and transmission, and the increase in the amount of data, will bring about an increase in electricity consumption and power equipment, thereby increasing the market space for these devices will be used mainly in power MOSFETs .

The automotive industry in the past two years happens to be a very good observer, because the automotive industry is very concerned about safety, so the consistency of the components and pass rate has very high requirements, usually a qualified product still needs to undergo 1-2 years of verification cycle. This is why the automotive industry has high performance requirements and demand for products that can only be produced by leading manufacturers, but some of them are using mid-range power MOSFETs - the automotive industry uses power MOSFETs that have naturally moved down from the high-end level to the mid-range level.

With the rapid development of new energy vehicles, MOSFET demand has surged. mosfet is the core component in automotive electronics, automotive engines, drive systems in the transmission controller, as well as braking, steering control, are inseparable from the mosfet. and in traditional fuel vehicles auxiliary brakes, power steering and seat control systems, are required to use the motor, with the growth in the number of traditional vehicles built-in motor The market growth of MOSFETs is also driven by the growth of the number of built-in motors in conventional vehicles.

Prepare your supply chain

Buyers of electronic components must now be prepared for future prices, extended delivery time, and continuous challenge of the supply chain. Looking forward to the future, if the price and delivery time continues to increase, the procurement of JIT may become increasingly inevitable. On the contrary, buyers may need to adopt the "just in case" business model, holding excess inventory and finished products to prevent the long -term preparation period and the supply chain interruption.

As the shortage and the interruption of the supply chain continue, communication with customers and suppliers will be essential. Regular communication with suppliers will help buyers prepare for extension of delivery time, and always understand the changing market conditions at any time. Regular communication with customers will help customers manage the expectations of potential delays, rising prices and increased delivery time. This is essential to ease the impact of this news or at least ensure that customers will not be taken attention to the sudden changes in this chaotic market.

Most importantly, buyers of electronic components must take measures to expand and improve their supplier network. In this era, managing your supply chain requires every link to work as a cohesive unit. The distributor of the agent rather than a partner cannot withstand the storm of this market. Communication and transparency are essential for management and planning. In E-energy Holding Limited, we use the following ways to hedge these market conditions for customers:

Our supplier network has been reviewed and improved for more than ten years.

Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.

E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.

Our procurement is concentrated in franchise and manufacturer direct sales.

Our customer manager is committed to providing the highest level of services, communication and transparency. In addition to simply receiving orders, your customer manager will also help you develop solutions, planned inventory and delivery plans, maintain the inventory level of regular procurement, and ensure the authenticity of your parts.

Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.

[sporadicsheeprunaway]

Mosfet 15a

Mosfet 15a 500v

Mosfet 100v 15a

Mosfet 60v 15a

Mosfet 15v

This post explains for the MOSFET PA110BDA.

Smart Filtering. As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. Applied Filters: Semiconductors Discrete Semiconductors Transistors MOSFET. Transistor Polarity = P-Channel Vds - Drain-Source Breakdown Voltage = 150 V.

The board is of high power MOS trigger switch driver module and control board with field-effect tube to adjust the electronic switch. It adopts imported double MOS parallel active output to show lower internal resistance,greater electric current and power. Besides it works at 15A,400W under common temperature which satisfies most devices usage. HAOYU Electronics High-power MOSFET Trigger Switch Drive Module MOSFET-Trigger-Switch-Module - Description The board is of high power MOS trigger switch driver module and control board with field-effect tube to adjust the electronic switch. It adopts imported double MOS parallel active output to show lower internal resistance,greater electric current and power. 2020 popular Mosfet 15a trends in Consumer Electronics, Electronic Components & Supplies, Home Improvement, Sports & Entertainment with Mosfet 15a and Mosfet 15a. Discover over 282 of our best selection of Mosfet 15a on AliExpress.com with top-selling Mosfet 15a brands. Shop the top 25 most popular Mosfet 15a at the best prices! MOSFET 150V, 15A, 40mΩ. A (1002kB) This N-Channel MOSFET is produced using an advanced PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. R DS (on) = 31mΩ ( Typ.)@ V GS = 10V, I D = 15A. Low Gate Charge, Q G = 14.3nC ( Typ.) High Performance Trench.

The Part Number is PA110BDA.

The Package is TO-252 Type

The function of this transistor is Silicon N -hannel MOS Type Transistor.

Manufacturers : UNIKC Semiconductor

Image

Mosfet 15a 500v

Description : Silicon N Channel MOS Type Field Effect Transistor

Absolute Maximum Ratings (Tc = 25°C)

Microsoft office for mac os x 10.7 5 free download. Free switch download for mac. 1. Drain to source voltage : VDSS = 100 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 15 A 4. Drain power dissipation : PD =50 W 5. Single pulse avalanche energy : Eas = 14.8 mJ 6. Avalanche current : Iar = 5.4 A 7. Channel temperature : Tch = 150 °C 8. Storage temperature : Tstg = -55 to +150 °C

Mosfet 100v 15a

Pinout

PA110BDA PDF Datasheet

Mosfet 60v 15a

Posts related to ‘ MOSFET ‘

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Mosfet 15v

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[shunlongwei]

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[vbsemi-mosfet]

Application of VBE1638 MOSFET in Automotive Instrument Control Unit: Enhancing Power Management and Signal Processing

With the continuous advancement of automotive electronics technology, the Instrument Control Unit (ICU) serves as a crucial module in automotive electronic systems, responsible for processing and displaying key vehicle information. To meet the high demands for efficiency and reliability in modern vehicles, the ICU module requires superior performance in power management and switching control. The VBE1638 MOSFET, launched by VBsemi, provides an ideal solution with its excellent electrical characteristics, significantly improving the efficiency of signal processing and power management in ICU modules.

Efficient Power Management The ICU module must achieve stable power management under various load conditions, and the VBE1638, with its 60V drain-source voltage and maximum drain current of 45A, meets the demands of high-power applications. Utilizing advanced trench technology, it reduces on-resistance (with a typical value of only 25mΩ), which minimizes power loss, enhances power management efficiency, reduces heat generation, and extends the lifespan of the device.

Precise Signal Processing Precise signal processing is critical in automotive ICU modules, especially when dealing with complex sensor data. The VBE1638 MOSFET, with its low threshold voltage of 1.7V, enables quick response, ensuring the circuit can switch rapidly and adapt to different working states. Its +20V gate-source voltage (V_GS) ensures high reliability and stability in various driving environments.

Robust Thermal Performance The automotive environment is highly demanding, requiring ICU modules to operate stably over long periods under high temperatures, vibrations, and current fluctuations. The VBE1638, packaged in a TO252 casing, offers excellent thermal performance, effectively preventing overheating in high-temperature environments, ensuring long-term stable operation, and reducing vehicle system maintenance costs.

Application Advantages The VBE1638 MOSFET is widely used in automotive instrument control unit modules, with optimized power management and power control performance ensuring reliable operation under varying load conditions. Whether in power management systems or complex control scenarios, the VBE1638 delivers stable and efficient performance.

Product Specifications

Model: VBE1638

Package: TO252

Polarity: N-channel

Drain-Source Voltage (VDS): 60V

Gate-Source Voltage (VGS): +20V

Threshold Voltage (Vth): 1.7V

On-Resistance (RDS(on) @VGS=4.5V): 30mΩ

On-Resistance (RDS(on) @VGS=10V): 25mΩ

Maximum Drain Current (ID): 45A

Technology: Trench

Other Applicable Areas

Power Tools: In the power tool sector, such as drills and hammers, MOSFETs provide stable power output. With its high current-handling capacity and low on-resistance, the VBE1638 is an ideal choice for these modules, ensuring high efficiency and stable performance under heavy workloads.

Industrial Automation: The VBE1638 is suitable for industrial automation equipment, including PLC controllers and motor drivers, supporting efficient automation and continuous innovation in smart manufacturing systems.

LED Lighting: In LED lighting applications, the VBE1638 is used in LED driver modules, providing stable and efficient power support, ensuring long life and low energy consumption for LED lamps, streetlights, and landscape lighting products.

As a high-performance MOSFET designed for automotive instrument control unit modules, the VBE1638 excels in power management and signal processing. Whether in complex signal processing scenarios or high-load power management, it helps enhance the overall efficiency and stability of ICU modules. As automotive electronics continue to evolve, the VBE1638 will play a vital role in more automotive applications, contributing to the innovation and upgrading of automotive electronic systems.

[polashislam]

[technogeekstmr]

Discrete Semiconductors Market - Growth, Size, Share, Demand and Analysis of Key Players- Forecasts To 2027

Discrete semiconductor refers to a single circuit capable of executing distinct functions, which affects the electric current flow and is confined in its own package. These devices are designed and utilized usually for operations that require high power and frequency, while also requiring unique packaging store. Discrete semiconductors are basically circuits that are made up of different semiconductor components which are linked (connected) together on a circuit board. There are many applications that use discrete semiconductors such as voltage regulation, surge protection, amplification and sound reproduction, tuning of radio and TV receivers, general switching, signal processing, current steering, power conversion, temperature measurement, among others.

With increasing demand for high energy and power efficient devices, need for advanced discrete semiconductor devices is arising. This is promoting research and development in this field. There is increase in demand for portable electronic products and wireless communication. With increasing popularity of wireless power, there is increasing demand for better performance.  This in turn is driving market growth by promoting development of highly efficient and high frequency discrete semiconductors. Further, there is demand for MOSFETs and IGBTs due to increase in automobile’s electronic components. There has been growing shift in focus towards green energy power generation drives. This is further sustained as a result current technological improvement in microelectronic semiconductor devices. All these factors combined together are likely to drive the global discrete semiconductors market during the forecast period.

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Among the factors that are restraining market growth include growing demand for integrated circuits and lack of further innovation in discrete semiconductor technology. Further, increase price is discrete semiconductor devices compared to integrated circuits is posing major threat. These factors are hindering the adoption of discrete semiconductors. On the other hand, the surging trend of miniaturization in semiconductors and electronics sector could considerably provide new growth opportunities for the market. Owing to their small sizes, the circuits containing semiconductor devices are very compact.

The discrete semiconductors market can be studied on the basis of discrete semiconductor type, end-use, and geographically. Based on discrete semiconductor type, the market can be segregated into MOSFETs (planar & trench), insulated-gate bipolar transistor (IGBTs), bipolar junction transistor, thyristor (gate-commutated thyristor (GCTs), integrated gate-commutated thyristor (IGCTs), gate turn-off thyristor (GTO), triacs, etc.), rectifier (Schottky, generic, ultrafast) and others (small signal device, etc.). By end-use, the discrete semiconductors market is segmented into automotive, consumer electronics, telecommunication, industrial manufacturing, military & defense, aerospace, others. The global discrete semiconductors market has been estimated by dividing it into for five geographic regions namely- North America, South America, Europe, Asia Pacific, and Middle East & Africa. By regions, Asia-pacific region is projected to hold a significant share in the discrete semiconductors market due to rapidly flourishing electronic and semiconductors sector in developing economies such as China, India, etc. The vast majority of electronics production is focused in the Asia-Pacific region. In terms of end use, the automotive segment is projected to be the fastest growing segment of the global discrete semiconductors market.

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Some of the leading global players driving the discrete semiconductors market are Infineon Technologies AG, Fairchild Semiconductor International, Inc., ON Semiconductor, Toshiba Corporation, NXP Semiconductors N.V., Eaton Corporation Plc, STMicroelectronics, Vishay Intertechnology, Inc., Nexperia, Diodes Incorporate, Central Semiconductor Corp, and ROHM Semiconductor among others. Nearly half of the market share is expected to be held by these leading discrete semiconductors market players during the forecast period (2018-2026). These key players are focused on integrating innovative discrete semiconductor technologies into their core competencies, so as to establish a reputed brand image. Further, these players are engaged in strategic partnerships & acquisitions and development of strong distribution network for the purpose of achieving a strong customer base.

The report offers a comprehensive evaluation of the market. It does so via in-depth qualitative insights, historical data, and verifiable projections about market size. The projections featured in the report have been derived using proven research methodologies and assumptions. By doing so, the research report serves as a repository of analysis and information for every facet of the market, including but not limited to: Regional markets, technology, types, and applications.

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[lanshengic]

STMicroelectronics releases 100V industrial-grade STripFET F8 transistor with 40% higher figure of merit

【Lansheng Technology Information】On May 24, STMicroelectronics' STL120N10F8 N-channel 100V power MOSFET has extremely low gate-drain charge (QGD) and on-resistance RDS(on), and the figure of merit (FoM) 40% higher than the previous generation of similar products.

The new MOSFET from STMicroelectronics utilizes ST's STPOWER STripFET F8 advanced technology and introduces an oxide-filled trench process, which combines extremely low conduction loss and low gate charge to achieve high-efficiency switching performance. As a result, the STL120N10F8 has a maximum on-resistance RDS(on) of 4.xn--6m-fcc (at VGS = 10V) and operates efficiently up to 600kHz.

STripFET F8 technology also ensures that the output capacitance value can mitigate the drain-source voltage spike, minimizing charge and discharge energy waste. In addition, the body-drain diode of this MOSFET has a higher softness characteristic. These improvements reduce electromagnetic emissions, simplify compliance testing of the final system, and ensure electromagnetic compatibility (EMC) compliance with applicable product standards.

The STL120N10F8 has excellent energy efficiency and low electromagnetic radiation, which can enhance the power conversion performance of hard-switching and soft-switching topologies. In addition, it is the first STPOWER 100V STripFET F8 MOSFET to fully meet industrial specifications, making it ideal for motor control, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-operated equipment.

STMicroelectronics' new MOSFETs also have other advantages, including a small difference in gate threshold voltage (VGS(th)), which is useful in high-current applications and simplifies the parallel design of multiple power switches. The robustness of the new product is very strong, able to withstand 800A short-circuit pulse current impact for 10µs.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[trendingfact]

Trench Gate Power MOSFET Market: An Insight On the Important Factors and Trends Influencing the Market

A special type of metal oxide semiconductor field effect transistor (MOSFET) which is designed to handle the significant power level is known as power MOSFET. A trench gate power MOSFET is an attempt to achieve the high power drive capability by making a complete chip to vertically conduct the current from one surface to another. This is accomplished by stacking millions of trenches on a chip which are deep enough to cross the opposite doped ‘body’ region below the top surface. Each trench has a gate electrode and gate dielectric which control the current conduction in their vicinity by virtue of the field effect. Like any other MOSFET, a trench gate power MOSFET also contains the gate, source, drain, channel, and body regions as well as exhibits a current flow in vertical direction.

It has a LDD (lightly doped drain) region between the drain and the channel making it capable of sustain the large voltage in an OFF-state condition. The low resistance of a trench gate power MOSFET does not require heat sinks in many instances which enables the device to be made in a surface mount package for easier assembly on a printed circuit board. Fabrication of a trench-gate power MOSFET using a dual doped body region is being proposed for further improvement in the performance of the device. Trench gate power MOSFETs are used as electronic switch in the power management application. A trench gate power MOSFET has high impedence which means a trench gate power MOSFET is voltage controlled and not current controlled and hence can be used to achieve high switching speed despite the use of low power driver.

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The lowering of RON which is the on-resistance of the power MOSFET structure, is a major factor driving the demand for trench gate power MOSFET. Another factor which is driving the trench gate power MOSFET market is the enhancement of breakdown voltage i.e. VBD. Reduction in switching delays is the factor leading to the growth of the trench gate power MOSFET market. One of the drivers leading to the growth of the trench gate power MOSFET market are that it is leading to the enhancement in transconductance and dV/dt capability.

High damage immunity has also augmented the growth of trench gate power MOSFET market. Minimization of energy losses due to the trench gate power MOSFET is another major driver driving the market. The challenge faced by the trench gate power MOSFET market is the technological limitation of strong corner effect due to depth of trench and sharp corners. Another major challenge faced by the trench gate power MOSFET market is the high fabrication cost of the trench gate power MOSFET.

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The trench gate power MOSFET market can be segmented based on the application (Automotives, Consumer Electronics, Healthcare, and others), based on Product Type (P-type and N-type), and based on geography (North America, Europe, Asia Pacific, Middle East & Africa, and Latin America). Automotives accounts for the largest trench gate power MOSFET market as automobiles require voltage of less than 100V to be switched on and off. Consumer Electronics accounts for the second largest market as trench gate power MOSFET semiconductor devices enable miniaturization of electronics circuit which further provides saving in costs and printed circuit board’s space. Europe is the largest trench power gate MOSFET market owing to the biggest manufacturing market for automobiles. Asia Pacific is the largest growing market for

Some of the key players include Texas Instruments (U.S.), Vishay Siliconix (Germany), Infineon Technologies (Germany), Linear Technology (U.S.), Mini Circuits (U.S.), Polyphase Microwave Inc. (U.S.), Vadatech (U.S.), Maxim Integrated (U.S.), ST Microelectronics (Switzerland), Microchip Technology (U.S.), NXP Semiconductors (Netherlands), IXYS Corporation (U.S.), Microsemi (U.S.) etc.

[evgenychernyavskiy]

Toshiba launches 2.1mm x 2.54mm photorel

Toshiba launches 2.1mm x 2.54mm photorel

Toshiba launches 2.1mm x 2.54mm photorelay – Toshiba  has launched a photorelay in a 2.54SOP4 package that is 2.1mm high with a 2.54mm pitch. Fabricated using the  U-MOS VIII trench MOSFET process, the new TLP3145 combines an off-state output terminal voltage of 200V with a controllable on-state current of up to 0.4A continuously or 1.2A when pulsed. This makes TLP3145 a suitable … This story…

[purcell-engineering]

Toshiba launches 2.1mm x 2.54mm photorelay

Toshiba  has launched a photorelay in a 2.54SOP4 package that is 2.1mm high with a 2.54mm pitch. Fabricated using the  U-MOS VIII trench MOSFET process, the new TLP3145 combines an off-state output terminal voltage of 200V with a controllable on-state current of up to 0.4A continuously or 1.2A when pulsed. This makes TLP3145 a suitable ...

This story continues at Toshiba launches 2.1mm x 2.54mm photorelay

Or just read more coverage at Electronics Weekly

[e-energyit]

Summary of commonly used power semiconductor devices|E-energy

Summary of commonly used power semiconductor devices

1.MCT(MOS Controlled Thyristor)

MCT is a new MOS and bipolar composite device. As shown in the figure above, MCT is a high impedance MOSFET, low drive figure MCT power, fast switching speed characteristics and SCR high voltage, high current characteristics combined together to form a high power, high voltage, fast full control type devices. In essence, MCT is a MOS gate-controlled SCR, which can be turned on or off by adding a narrow pulse to the gate, and it consists of numerous single cells in parallel.

2.IGCT (Integrated Gate Commutated Thyristors)

IGCT is a new type of device developed by combining IGBT and GTO technologies on the basis of SCR technology, which is suitable for high-voltage and large-capacity inverter systems, and is a new type of power semiconductor device used in giant power electronics packages.

IGCT is a GTO chip integrated with anti-parallel diode and gate driver circuit, and then connected with its gate driver in a low inductance way at the periphery, combining the advantages of stable turn-off capability of transistor and low pass-state loss of SCR. The SCR's performance is utilized in the on-state phase and the transistor's characteristics are presented in the off-state phase.

3.IEGT (Injection Enhanced Gate Transistor)

IEGT is an IGBT series power electronic device with withstand voltage of 4kV or more, which has made a leap forward in the development of large-capacity power electronic devices by adopting the structure of enhanced injection to achieve low pass-state voltage. It has the characteristics of low loss, high speed operation, high voltage withstand, active gate drive intelligence, etc., as well as the use of trench structure and multi-chip parallel connection and self-equalizing current characteristics, so it has the potential to further expand the current capacity. In addition, many derivatives are available in modular packages, which are expected in large and medium capacity converter applications.

4.IPEM (Integrated Power Elactronics Modules)

IPEM is a module that integrates many devices of power electronics devices together. It starts with the semiconductor devices MOSFET, IGBT or MCT and diode chips packaged together to form a building block unit, and then these building block units are iterated onto an open-hole, high conductivity insulating ceramic substrate, under which are copper substrates, beryllium oxide ceramic and heat sinks in turn. IPEM realizes the intelligence and modularity of power electronics technology, greatly reduces circuit wiring inductance, system noise and parasitic oscillation, and improves system efficiency and reliability.

5.PEBB (Power Electric Building Block)

A typical PEBB (Power Electric Building Block) is an integrated device or module that can handle electrical energy developed on the basis of IPEM, which is not a specific semiconductor device, but an integration of different devices and technologies designed according to the optimal circuit structure and system structure.

A typical PEBB is shown in the figure above. Although it looks like a power semiconductor module, a PEBB includes not only power semiconductor devices, but also gate drive circuits, level translation, sensors, protection circuits, power supplies and passive devices. Through these two interfaces, several PEBBs can form power electronic systems. These systems can be as simple as a small DC-DC converter or as complex as a large distributed power system. The number of PEBBs in a system can range from one to any number. Multiple PEBB modules working together can perform system-level functions such as voltage conversion, energy storage and conversion, and cathodic resistance matching, etc. The most important feature of PEBB is its versatility.

6. Super Power SCR

Since the introduction of SCR, its power capacity has increased by nearly 3000 times. Now many countries have been able to produce 8kV/4kA SCRs stably. 8kV/4kA and 6kV/6kA light-triggered SCRs (LTT) are now in production in Japan. The United States and Europe mainly produce electrically triggered SCR. recent decade, due to the rapid development of self-closing devices, SCR applications have shrunk, but, due to its high voltage, high current characteristics, it still occupies a very important position in HVDC, static reactive power compensation (SVC), high-power DC power supply and ultra-high-power and high-voltage variable frequency speed control applications. It is expected that in the next few years, SCR will continue to develop in high-voltage, high-current applications.

7. Pulse power closure switch SCR

This device is particularly suitable for the transmission of very strong peak power (several MW), very short duration (several ns) discharge closure switch applications, such as: lasers, high-intensity lighting, discharge ignition, electromagnetic transmitters and radar modulators. The device can be opened quickly at a high voltage of several kV, does not require discharge electrodes, has a long service life, small size, relatively low price, and is expected to replace the current application of high-voltage ion gate, ignition tube, spark gap switch or vacuum switch.

8. New GTO devices - integrated gate commutation SCR

Currently there are two conventional GTO alternatives: high-power IGBT modules, new GTO-derived devices - integrated gate commutation IGCTSCR. IGCTSCR is a new high-power devices, compared with conventional GTOSCR, it has many excellent characteristics, such as, without buffer circuit to achieve reliable shutdown, short storage time, high turn-on capability, turn-off gate charge and The application system (including all devices and peripheral components such as anode reactors and buffer capacitors, etc.) has low total power loss, etc.

9. IGBT (Trench IGBT) modules

The IGBT cells in today's high-power IGBT modules usually use trench gate structure IGBTs, which are usually processed with 1μm accuracy compared to flat gate structure, thus greatly improving cell density. The presence of gate trench eliminates the junction-type field effect transistor effect between adjacent cells in planar gate devices, and introduces a certain electron injection effect, which makes the on-state resistance decrease. The conditions are created for increasing the thickness of the long base region and improving the device withstand voltage. Therefore, the high-voltage and high-current IGBT devices that have emerged in recent years all adopt this structure.

10.IEGT (Injection Enhanced Gate Trangistor)

In recent years, Toshiba of Japan has developed IEGT, which, like IGBT, is also divided into two structures: planar gate and trench gate, with the former product coming out soon and the latter still under development. 2 orders of magnitude lower) and higher operating frequency. In addition, the device adopts a flat crimped electrode lead structure, which can be expected to have high reliability.

11.MOS Gated SCR

MOS gate-controlled SCR makes full use of the good pass-state characteristics of SCR, excellent turn-on and turn-off characteristics, and is expected to have excellent self-shutdown dynamic characteristics, very low pass-state voltage drop and high voltage resistance, becoming a promising high-voltage high power device for future development in power devices and power systems. There are three main MOS gated SCR structures: MCT, BRT, and EST, of which EST is probably the most promising structure in MOS. However, it will take quite a long time for this device to really become a commercial and practical device and reach the level of replacing GTO.

12.GaAs diode

With the increasing frequency of converter switching, the requirements for fast recovery diodes have also increased. It is known to have superior high-frequency switching characteristics than silicon diodes, but due to process technology and other reasons, GaAs diodes have a lower withstand voltage, the practical application is limited. To meet the needs of high-voltage, high-speed, high-efficiency and low-EMI applications, high-voltage GaAs high-frequency rectifier diodes have been successfully developed at Motorola. Compared with silicon fast recovery diodes, the significant features of this new diode are: small reverse leakage current change with temperature, low switching losses, and good reverse recovery characteristics.

13.SiC power devices

In the power devices made of new semiconductor materials, the most promising is the SiC power devices. Its performance index is an order of magnitude higher than GaAs devices. Compared with other semiconductor materials, SiC has the following excellent physical characteristics: high band width, high saturation electron drift rate, high breakdown strength, low dielectric constant and high thermal conductivity. These excellent physical properties make SiC an ideal semiconductor material for high temperature, high frequency, and high power applications. Under the same withstand voltage and current conditions, the drift region resistance of SiC devices is 200 times lower than that of silicon, and even the on-state voltage drop of high withstand voltage SiC field-effect tubes is much lower than that of unipolar and bipolar silicon devices. Moreover, the switching time of SiC devices can reach the order of 10nS and has a very superior FBSOA.

Prepare your supply chain

Buyers of electronic components must now be prepared for future prices, extended delivery time, and continuous challenge of the supply chain. Looking forward to the future, if the price and delivery time continues to increase, the procurement of JIT may become increasingly inevitable. On the contrary, buyers may need to adopt the "just in case" business model, holding excess inventory and finished products to prevent the long -term preparation period and the supply chain interruption.

As the shortage and the interruption of the supply chain continue, communication with customers and suppliers will be essential. Regular communication with suppliers will help buyers prepare for extension of delivery time, and always understand the changing market conditions at any time. Regular communication with customers will help customers manage the expectations of potential delays, rising prices and increased delivery time. This is essential to ease the impact of this news or at least ensure that customers will not be taken attention to the sudden changes in this chaotic market.

Most importantly, buyers of electronic components must take measures to expand and improve their supplier network. In this era, managing your supply chain requires every link to work as a cohesive unit. The distributor of the agent rather than a partner cannot withstand the storm of this market. Communication and transparency are essential for management and planning. In E-energy Holding Limited, we use the following ways to hedge these market conditions for customers:

Our supplier network has been reviewed and improved for more than ten years.

Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.

E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.

Our procurement is concentrated in franchise and manufacturer direct sales.

Our customer manager is committed to providing the highest level of services, communication and transparency. In addition to simply receiving orders, your customer manager will also help you develop solutions, planned inventory and delivery plans, maintain the inventory level of regular procurement, and ensure the authenticity of your parts.

Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.