https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/si2309cds-t1-ge3-vishay-3122871
MOSFET transistors, Power MOSFET, bipolar junction transistors, mosfet module
SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/si2309cds-t1-ge3-vishay-2000777
Audio mosfet, Mosfet applications, mosfet gate, mosfet switch, Transistor mosfet
SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3
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Carbon nanotube–based MOSFETs doped using a scalable technique
In recent years, electronics engineers have been trying to identify materials that could help to shrink the size of transistors without compromising their performance and energy efficiency. Low-dimensional semiconductors, solid-state superconducting materials with fewer than three spatial dimensions, could help to achieve this.
Among low-dimensional semiconducting materials that have been found to be particularly promising for reducing the length of gates inside transistors are one-dimensional (1D) carbon nanotubes. Nonetheless, most proposed strategies to dope these materials and control the polarity inside them are not compatible with existing large-scale electronics production methods.
Read more.
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/dmg1012uw-7-diodes-incorporated-7104900
Mosfet switch, mosfet uses, mosfet circuits, transistor switch, Power MosFet
N-Channel 20 V 1 A 0.45 Ω Surface Mount Enhancement Mode Power MosFet - SOT-323
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ROHM's 4th Generation SiC MOSFETs Tech Explainer
https://www.futureelectronics.com/m/rohm. ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. https://youtu.be/mNhRw_FvRPo
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf4905strlpbf-infineon-8173863
Types of mosfet, Mosfet vs transistor, how mosfet works, mosfet function
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
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MOSFET's pull-down resistor serves what function?
MOSFET's pull-down resistor serves what function? (youtube.com)
What is the function of the pull-down resistor on the of a MOSFET?
The pull-down resistor between the gate (G) and source (S) of a MOSFET serves several functions:
1.Preventing False Turn-On: The Miller capacitance, a parasitic capacitor between the gate (G) and drain (D), can cause the MOSFET’s drain-source voltage (Vds) to change from nearly 0 (saturation voltage drop) to the bus voltage when the MOSFET is turned off. This rate of voltage change is "dv/dt." Since a capacitor responds to voltage changes by generating a current, the voltage change across the capacitor generates a current "i."
The gate-source (G-S) junction has an insulating layer, usually silicon dioxide (SiO2), making G-S a high-impedance path (tens to hundreds of megaohms). If there is a driving abnormality, the current through the Miller capacitance can charge the G-S junction. A small current through a high impedance can correspond to a high voltage, potentially charging the gate voltage above the threshold voltage "Vgs(th)," causing the MOSFET to turn on again, which is a dangerous situation.
2.Providing a Discharge Path: In a flyback power supply topology, the Miller capacitance current is discharged through a low-resistance path inside the driver chip, preventing the gate from being charged high enough to cause a false turn-on.
Here, we understand that there is already a discharge pull-down resistor inside the driver chip. However, if the gate resistor (Rg) is open-circuited or not connected for any reason, the external pull-down resistor (R8) can provide a discharge path for the Miller capacitance, keeping the G-S junction of the MOSFET at low impedance for a stable and safe state. This is a critical function of the pull-down resistor.
3.Pre-Protection Resistor: Another function of the pull-down resistor is as a pre-protection resistor. The G-S junction of a MOSFET is high-impedance, which is why it is sensitive to ESD. High voltage applied to the gate is not easily discharged and, over time, can damage the silicon dioxide layer between the G-S junction, leading to device failure.
Therefore, the pull-down resistor balances power consumption and effective discharge. Typically, for low to medium power supplies (0-500W), a resistor value of around 10K-20K is chosen, while for high-power supplies, 4.7K-10K is selected.
That concludes this content! Thank you for your support!
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/pmv30xpear-nexperia-2092485
Power MOSFET, MOSFET Transistors, types of mosfet, Transistors MOSFET
PMV30XEAR Series 20 V 34 mOhm 490 mW SMT P-Channel TrenchMOS FET - SOT-23
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/pmv30xpear-nexperia-7092005
Mosfet applications, mosfet function, mosfet switch, mosfet switch circuit
PMV30XEAR Series 20 V 34 mOhm 490 mW SMT P-Channel TrenchMOS FET - SOT-23
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/bsc047n08ns3gatma1-infineon-8060191
High voltage mosfet, mosfet switch circuit, Digital transistors, audio mosfet
Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS™ Power Mosfet - TDSON-8
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fdn306p-onsemi-2184710
High power mosfet, audio mosfet, Mosfet switch circuit, transistor Mosfet
P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fdn306p-onsemi-8348559
Mosfet transistor, mosfet switch, Mosfet vs transistor, Mosfet switch circuit
P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfp064npbf-infineon-7173870
Power mosfet, mosfet applications, types of mosfet, mosfet switch, mosfet uses
Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC
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https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/bsz160n10ns3gatma1-infineon-8060177
Mosfet transistor, power supply, power mosfet module, small signal mosfet
Single N-Channel 100 V 16 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8
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