#Dynamic Random Access Memory (DRAM) Market Size

[dhirajmarketresearch]

[ravinderimarc]

The global dynamic random access memory (DRAM) market size reached USD 135.4 Billion in 2024. Looking forward, IMARC Group expects the market to reach USD 359.0 Billion by 2033, exhibiting a growth rate (CAGR) of 11.4% during 2025-2033. The rising consumer electronics industry, along with the widespread adoption of tablets, laptops, smartphones, etc., is primarily driving the market. The integration of AI into DRAM systems is a significant market trend. At present, Asia Pacific holds the largest market share, driven by rapid development in consumer electronics.

[globalgrowthinsights]

Fluorine Aromatic Pi Film Market Developments, Trends & Opportunities till 2032

Fluorine Aromatic Pi Film Market provides in-depth analysis of the market state of Fluorine Aromatic Pi Film manufacturers, including best facts and figures, overview, definition, SWOT analysis, expert opinions, and the most current global developments. The research also calculates market size, price, revenue, cost structure, gross margin, sales, and market share, as well as forecasts and growth rates. The report assists in determining the revenue earned by the selling of this report and technology across different application areas.

Geographically, this report is segmented into several key regions, with sales, revenue, market share and growth Rate of Fluorine Aromatic Pi Film in these regions till the forecast period

North America

Middle East and Africa

Asia-Pacific

South America

Europe

Key Attentions of Fluorine Aromatic Pi Film Market Report:

The report offers a comprehensive and broad perspective on the global Fluorine Aromatic Pi Film Market.

The market statistics represented in different Fluorine Aromatic Pi Film segments offers complete industry picture.

Market growth drivers, challenges affecting the development of Fluorine Aromatic Pi Film are analyzed in detail.

The report will help in the analysis of major competitive market scenario, market dynamics of Fluorine Aromatic Pi Film.

Major stakeholders, key companies Fluorine Aromatic Pi Film, investment feasibility and new market entrants study is offered.

Development scope of Fluorine Aromatic Pi Film in each market segment is covered in this report. The macro and micro-economic factors affecting the Fluorine Aromatic Pi Film Market

Advancement is elaborated in this report. The upstream and downstream components of Fluorine Aromatic Pi Film and a comprehensive value chain are explained.

Browse More Details On This Report at @https://www.globalgrowthinsights.com/market-reports/fluorine-aromatic-pi-film-market-100576

 Global Growth Insights

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[spookysaladchaos]

Global Top 5 Companies Accounted for 85% of total Dynamic Random Access Memory (DRAM) market (QYResearch, 2021)

Dynamic random access memory (DRAM) is a type of semiconductor memory that is typically used for the data or program code needed by a computer processor to function.

Dynamic random access memory, or DRAM, is a specific type of random access memory that allows for higher densities at a lower cost.

According to the new market research report “Global Dynamic Random Access Memory (DRAM)  Market Report 2023-2029”, published by QYResearch, the global Dynamic Random Access Memory (DRAM)  market size is projected to reach USD 146.64 billion by 2029, at a CAGR of 10.0% during the forecast period.

Figure.   Global Dynamic Random Access Memory (DRAM)  Market Size (US$ Million), 2018-2029

Figure.   Global Dynamic Random Access Memory (DRAM)  Top 5 Players Ranking and Market Share（Based on data of 2021, Continually updated）

The global key manufacturers of Dynamic Random Access Memory (DRAM)  include Samsung Electronics Co. Ltd., SK Hynix Inc., Micron Technology Inc., Nanya Technology Corporation, Winbond Electronics Corporation, Company 6, Company 7, Company 8, Company 9, Company 10, etc. In 2021, the global top five players had a share approximately 85.0% in terms of revenue.

About QYResearch

QYResearch founded in California, USA in 2007.It is a leading global market research and consulting company. With over 16 years’ experience and professional research team in various cities over the world QY Research focuses on management consulting, database and seminar services, IPO consulting, industry chain research and customized research to help our clients in providing non-linear revenue model and make them successful. We are globally recognized for our expansive portfolio of services, good corporate citizenship, and our strong commitment to sustainability. Up to now, we have cooperated with more than 60,000 clients across five continents. Let’s work closely with you and build a bold and better future.

QYResearch is a world-renowned large-scale consulting company. The industry covers various high-tech industry chain market segments, spanning the semiconductor industry chain (semiconductor equipment and parts, semiconductor materials, ICs, Foundry, packaging and testing, discrete devices, sensors, optoelectronic devices), photovoltaic industry chain (equipment, cells, modules, auxiliary material brackets, inverters, power station terminals), new energy automobile industry chain (batteries and materials, auto parts, batteries, motors, electronic control, automotive semiconductors, etc.), communication industry chain (communication system equipment, terminal equipment, electronic components, RF front-end, optical modules, 4G/5G/6G, broadband, IoT, digital economy, AI), advanced materials industry Chain (metal materials, polymer materials, ceramic materials, nano materials, etc.), machinery manufacturing industry chain (CNC machine tools, construction machinery, electrical machinery, 3C automation, industrial robots, lasers, industrial control, drones), food, beverages and pharmaceuticals, medical equipment, agriculture, etc.

For more information, please contact the following e-mail address:

Email: global@qyresearch.com

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[govindhtech]

Exploring Samsung’s Latest 12nm-Class DDR5 DRAM

Ideal for the Age of Artificial Intelligence, Samsung Electronics Has Introduced the Industry’s Highest-Capacity 12nm-Class 32Gb DDR5 DRAM

Offers twice the capacity of 16 GB modules while maintaining the same package size, making possible the manufacturing of 128 GB DRAM modules without the use of the TSV process and resulting in a 10% reduction in power consumption.

Additionally, the new product opens the path for DRAM modules with capacities of up to 1 terabyte

Samsung will continue its engagement with a wide variety of sectors and provide support for a wide range of applications by using its enlarged portfolio of 12nm-class DRAM.

Samsung Electronics, a global leader in advanced memory technology, made the announcement today that it has created the industry’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM1 utilising 12 nanometer (nm)-class process technology. This achievement was made possible by the company’s use of a 12 nanometer (nm)-class process technology.

This accomplishment was made possible by Samsung when the company started mass manufacturing of their 12nm-class 16Gb DDR5 DRAM in May of 2023. It reaffirms Samsung’s position as the industry leader in next-generation DRAM technology and heralds the beginning of the next chapter in the history of high-capacity memory.

“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1 terabyte (TB),” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “This allows us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” Hwang added.

“We will continue to develop DRAM solutions through differentiated process and design technologies in an effort to break the boundaries of memory technology.”

Since 1983, there has been a 500,000-fold increase in the capacity of DRAM

After developing its initial dynamic random access memory (DRAM) with 64 kilobits (Kb) in 1983, Samsung has now achieved success in increasing its DRAM capacity by a factor of 500,000 over the course of the last 40 years.

The most recent memory product that Samsung has released claims the industry’s greatest capacity for a single DRAM chip and delivers twice the capacity of 16Gb DDR5 DRAM in the same package size. This memory product was produced by Samsung employing the most cutting-edge methods and technologies in order to boost integration density and design optimisation.

In the past, the Through Silicon Via (TSV) manufacturing technique was necessary for DDR5 128GB DRAM modules that were created utilising 16Gb DRAM. When compared to 128GB modules that include 16Gb DRAM, however, power consumption may be reduced by around 10% when utilising Samsung’s 32Gb DRAM in their production of the 128GB module.

This is possible since the TSV process is no longer necessary. Because of this technical advancement, the device is the best option for businesses that place a premium on power efficiency, such as data centres.

With its 12nm-class 32Gb DDR5 DRAM serving as a foundation, Samsung intends to continue growing its array of high-capacity DRAM in order to fulfil the needs of the computing and IT sector both now and in the future.

Data centres and clients that demand applications like artificial intelligence and next-generation computing will be supplied with the 12-nm-class 32Gb DRAM by Samsung, which will allow Samsung to reassert its leading position in the market for next-generation DRAM. Additionally, the device will play a significant part in Samsung’s ongoing efforts to collaborate with other prominent companies in the industry.

By the time this year comes to a close, it is anticipated that mass manufacturing of the brand-new 12nm-class 32Gb DDR5 DRAM will have begun.

News source

https://govindhtech.com/exploring-samsungs-latest-12nm-class-ddr5-dram/

[lanshengic]

Samsung releases its largest capacity 12nm-class 32Gb DDR5 DRAM product

【Lansheng Technology Information】On September 1, 2023, Samsung announced that it has developed its largest-capacity 32Gb DDR5 DRAM (DDR5 DRAM: fifth-generation double data rate synchronous dynamic random access memory) using 12-nanometer (nm) process technology. This is another achievement following Samsung's mass production of 12nm-class 16Gb DDR5 DRAM in May 2023, which solidifies Samsung's position in the field of developing next-generation DRAM memory technology and opens a new chapter in the era of large-capacity memory .

"Based on Samsung's latest 12nm-class 32Gb memory, we can develop a solution to achieve 1TB memory modules, which will help meet the growing demand for large-capacity DRAM memory in the era of artificial intelligence and big data." SangJoon Hwang, executive vice president of the memory development group of Samsung Electronics Memory Division, said, "We will continue to develop memory solutions through differentiated process and design technologies to break through the bottleneck of memory technology."

Since Samsung developed the first 64 kilobit (Kb) memory in 1983, it has increased memory capacity by a factor of 500,000 over the past 40 years. The newly developed 32Gb DDR5 memory particle adopts the cutting-edge process technology, which improves the integration density and optimizes the package design. Compared with the DDR5 16Gb chip, under the same package size, the capacity of Samsung's single-chip DRAM memory particle doubles.

In particular, DDR5 128GB memory modules manufactured using 16Gb memory particles in the past required a through-silicon via (TSV) process. Now, by using the newly developed 32Gb memory particles, it is possible to produce 128GB memory modules without using the through-silicon via (TSV) process. Compared with a 128GB memory module using a 16Gb memory package, its power consumption is reduced by about 10%. This technological breakthrough makes the product the solution of choice for enterprises concerned with energy efficiency, such as data centers.

Based on 12nm-class 32Gb DDR5 DRAM, Samsung plans to continue expanding its lineup of high-capacity memory products to meet the growing demands of the high-performance computing and IT industries. By offering 12nm-class 32Gb memory to data centers and customers adopting applications such as artificial intelligence and next-generation computing, Samsung hopes to strengthen its position at the forefront of the next-generation memory market. In the future, this product will also play a vital role in Samsung's long-term cooperation with other core industry partners.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[trendingmarketingnews]

Dynamic Random-Access Memory (DRAM) Market Share, Growth,Analysis, Global Industry Overview, 2021-2027

The Global Dynamic Random-Access Memory (DRAM) Market research report offers accurate insights for the growth prospects of the Dynamic Random-Access Memory (DRAM) market in the forecast years 2020-2027. The report is an all-inclusive study of the Dynamic Random-Access Memory (DRAM) market that offers the readers a better view of the current and emerging market trends through a thorough analysis of the market size, growth trends, supply and demand ratio, market share, sales network and distribution channels, and other key elements.

Furthermore, the report is furnished with the current market scenario with regards to the COVID-19 pandemic. The global public health emergency has disrupted the lives of everyone across the globe. It has also had a substantial impact on the Dynamic Random-Access Memory (DRAM) industry as global supply chains have been disrupted, and the financial scenario is tight. The report assesses the initial and future impact of the pandemic on the market and its key segments to offer an accurate futuristic outlook for remuneration in a post-COVID-19 scenario.

Get a sample copy of the report @ https://www.reportsanddata.com/sample-enquiry-form/2855

Scope of the Market Report:

The report offers a holistic overview of the Dynamic Random-Access Memory (DRAM) industry that offers all the essential information. Furthermore, the market is segmented into product types, applications, end-user industries, and regions. The report is formulated by extensive primary and secondary research and backed by the verified data from industry experts and professionals. It also sheds light on the market size and analyzes the market position. Along with this, the report extensively studies the competitive landscape in the market and profiles the key players of the industry.

The report covers extensive analysis of the key market players in the market, along with their business overview, expansion plans, and strategies. The key players studied in the report include:

Samsung Electronics Co. Ltd., Micron Technology Inc., Kingston Technology, Nanya Technology Corp., Elpida Memory Inc., Intel, Advanced Micro Device (AMD), Etron Technology Inc., and Texas Instruments.

Type Outlook (Revenue, USD Billion; 2019-2027)

Module DRAM

Component DRAM

Technology Outlook (Revenue, USD Billion; 2019-2027)

SDRAM

RDRAM

DDR SDRAM

FP DRAM

EDO DRAM

Applications Outlook (Revenue, USD Billion; 2019-2027)

Mobile Devices

PC/Laptop

Server

Others

Request a discount on the report @ https://www.reportsanddata.com/discount-enquiry-form/2855

Additionally, the report covers an analysis of the key market regions where the market has substantial size and share. Along with the regions, the report also offers a country-wise analysis to enable better comprehension of the market competition. The key regions covered in the report are as follows:

North America (U.S., Canada)

Europe (U.K., Italy, Germany, France, Rest of EU)

Asia Pacific (India, Japan, China, South Korea, Australia, Rest of APAC)

Latin America (Chile, Brazil, Argentina, Rest of Latin America)

Middle East & Africa (Saudi Arabia, U.A.E., South Africa, Rest of MEA)

Summary of the Report:

The report offers a growth estimate for 8 years along with a forecast for market valuation

A thorough qualitative and quantitative analysis of the Global Dynamic Random-Access Memory (DRAM) Market

Advanced analytical tools such as SWOT analysis and Porter’s Five Forces analysis along with feasibility analysis and investment return analysis

Comprehensive study of the prominent players engaged in the market along with their product portfolio and business expansion strategies

Strategic recommendations for new entrants and established players

Extensive analysis of drivers, restraints, limitations, growth prospects and opportunities, and threats

In-depth regional analysis to offer a panoramic view of the Dynamic Random-Access Memory (DRAM) market along with a better understanding of the market’s competitive scenario

To read more about the report, visit @ https://www.reportsanddata.com/report-detail/dynamic-random-access-memory-market

Thank you for reading our report. The customization of the report is available as per your research needs. Please get in touch with us, and our team will ensure you get the report tailored as per your requirements.

[emaanderson]

Dynamic Random-Access Memory (DRAM) Market Driving Factors, Size, Revenue, Segments, Expansion, Demand, and Opportunities During 2023-2035

Global Dynamic Random-Access Memory (DRAM) Market Key Insights

During the forecast period of 2023-2035, the global dynamic random-access memory (DRAM) market is expected to reach an estimated value of ~USD 10 billion by 2035, by expanding at a CAGR of ~8%. The market further generated revenue of ~USD 7 billion in the year 2022. Major key factors propelling the growth of the dynamic random-access memory (DRAM) market worldwide are the expanding demand for high-memory smartphones and tablets, the broadening thriving of internet access, and the growing preference for quick online adaptability.

Market Definition of Dynamic Random-Access Memory (DRAM)

DRAM is a form of random-access semiconductor register that holds each information bit in a memory block that typically comprises a small capacitor and a transformer, both of which are based largely on metal-oxide-semiconductor (MOS) tech. Although the bulk of DRAM memory cell layouts includes a capacitor and a transistor, a few do not. A capacitor can be charged or discharged when utilized in a structure; these two indicators are used to represent the two parameters of a bit, which are conventionally referred to as 0 and 1. This recharge process is what sets dynamic random-access memory apart from SRAM.

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Global Dynamic Random-Access Memory (DRAM) Market: Growth Drivers

The growth of the global dynamic random-access memory (DRAM) market can be majorly attributed to the growing organizational focus on cloud computing, along with the demand for elevated data transfer, backup facilities, and high storage systems, which are anticipated to provide lucrative opportunities to the market over the next few years. In 2019, 60 percent of workloads were projected to be operated on a hosted cloud service, up from around 45 percent in 2018. In total, nearly 90% of businesses ran on the cloud at the same time. Additionally, requirements for high-performance tablets and smartphones, increasing international accessibility of network connectivity, and growing preferences for quick online adaptability are also responsible for boosting the market's growth. 

The global dynamic random-access memory (DRAM) market is also estimated to grow majorly on account of the following:

Escalating adoption of memory-integrated circuits and microcontrollers in automobile electronics

Surge in demand for various types of consumer electronics

Rising accessibility of Internet Connectivity Around the globe

Global Dynamic Random-Access Memory (DRAM) Market: Restraining Factor

The rising price of tablets and smartphones is reducing sales of this electronic equipment. Furthermore, unless severely damaged, the long life cycle of DRAMs allows for one-time investments in memory solutions. As a result, production popularity for DRAMs is slowing, posing new challenges to market suppliers. Hence, this factor is expected to be the major hindrance to the growth of the global dynamic random-access memory (DRAM) market during the forecast period.

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Global Dynamic Random-Access Memory (DRAM) Market Segmentation 

By Architecture (DDR3, DDR4, DDR5, DDR2, and Others

·        By Application (Smartphones, PC/Laptops, Consumer Products, Automotive, Datacenter, and Graphics) 

The automotive segment is predicted to dominate the worldwide dynamic random-access memory (DRAM) market. This can be attributed to the rising demand for processors with large memory capacities and throughput in self-driving and driver-aware devices. Aside from these, soaring revenues from electric vehicles, the global demand for in-vehicle infotainment systems, and government incentives in favor of large-scale adoption of electric vehicles are expected to drive segment growth by 2035. According to Edison Electric Institute data, approximately 1.2 million electric vehicles were sold in the US in April 2019, up from nearly 900,000 units in 2018.

By Region

The Asia Pacific dynamic random-access memory market (DRAM) is anticipated to hold the largest market share by the end of 2035 among the market in all the other regions. This development is attributable to the semiconductor sector's increasing influence. Soaring federal funding in a number of developing countries, including India, China, Taiwan, and South Korea, is anticipated to lead to the entry of regional manufacturers in the Asia Pacific region. These companies are expected to strengthen their international footprint by exporting their goods globally and expanding their production capabilities. For instance, Micron Technology stated in March 2022 that the global handset sector is expected to expand at a positive rate in 2022 owing to the increasing demand for 5G cell phones.

The market research report on global dynamic random-access memory (DRAM) also includes the market size, market revenue, Y-o-Y growth, and key player analysis applicable for the market in North America (U.S., and Canada), Latin America (Brazil, Mexico, Argentina, Rest of Latin America), Asia-Pacific (China, India, Japan, South Korea, Singapore, Indonesia, Malaysia, Australia, New Zealand, Rest of Asia-Pacific), Europe (U.K., Germany, France, Italy, Spain, Hungary, Belgium, Netherlands & Luxembourg, NORDIC (Finland, Sweden, Norway, Denmark), Ireland, Switzerland, Austria, Poland, Turkey, Russia, Rest of Europe), and Middle East and Africa (Israel, GCC (Saudi Arabia, UAE, Bahrain, Kuwait, Qatar, Oman), North Africa, South Africa, Rest of Middle East and Africa).

Key Market Players Featured in the Global Dynamic Random-Access Memory (DRAM) Market

Some of the key players of the global dynamic random-access memory (DRAM) market are Micron Technology Inc., Winbond Corporation, Nanya Technology Corporation, Samsung Group, SK hynix Inc., Kingston Technology Co., Inc., Intel Corporation, Elpida Memory Inc., Etron Technology Inc., Transcend Information, Inc., and others.

Browse complete Report Summary with TOC here: https://www.researchnester.com/request-toc-3460

[market-research-repoert]

Industry analysis provides a company with an understanding of its position relative to other companies in the industry. This can help them identify opportunities and potential threats, so they can prepare for the present and future. MRI Research helps organizations to figure out whats happening in a given industry, including demand and supply statistics, degree of competition, state of competition with other emerging industries, future prospects considering technological changes, and external factors on the industry

[dhirajmarketresearch]

[ravinderimarc]

The global DRAM market is poised for significant growth, having reached US$ 121.1 Billion in 2023. With a CAGR of 11.79% projected through 2032, the market is expected to expand to US$ 339.8 Billion. This growth is largely driven by the increasing demand for consumer electronics, including tablets, laptops, and smartphones.

[palesoultaco]

Emerging Memory Technologies Market Size, Share, Industry Growth, Trend, Business Opportunities, Challenges, Drivers and Restraint Research Report by 2028

The Global Emerging Memory Technologies Market Research Report provides a brief overview inclusive of the competitive landscape and key developments, policies, manufacturing costs, and processes. The report also provides the analysis of import/export, production and consumption ratio, supply and demand, cost, price, estimated revenue, and gross margins. The report further discusses in detail the driving factors influencing the growth of the market currently and in the coming years. 

The global emerging memory technologies market size reached USD 4.17 Billion in 2020 and is expected to register a revenue CAGR of 30.7% during the forecast period, according to latest analysis by Emergen Research. Increasing demand for high-end devices and increasing need for time saving in data transferring are factors projected to support market revenue growth between 2021 and 2028. In addition, increasing demand for universal memory devices will boost revenue growth of the market in future. Data overwriting is a major problem in old storage devices, and better memory technologies are needed to resolve this challenge.

If excess data is stored by a user, it can be problematic because it could result in erasing or overwriting older data. Universal memory device provides a smart solution to this problem. Universal memory devices store data as fast as Static Random-Access Memory (SRAM), while reducing power consumption as compared to that consumed by SRAM. The use of universal memory devices in data centers has become increasingly popular due to the cost-effectiveness and durability of Dynamic Random Access Memory (DRAM) as well as flash memory that is non-volatile, which makes the devices more durable in the long term. These are some major factors driving revenue growth of the global emerging memory technologies market.

Click the link to get info@ https://www.emergenresearch.com/industry-report/emerging-memory-technologies-market

Unfolding the prime factors prompting global Emerging Memory Technologies market growth:

The study offers an in-depth analysis of the product outlook, which depicts the latest production growth trends and profit valuation. It further fragments the global Emerging Memory Technologies market into a broad product spectrum.

The study covers essential data related to these products’ application landscape, the demand for and market share held by each application type, and their growth rate analysis over the estimated period.

A detailed description of the distribution channels, including distributors, producers, and buyers, is one of the report’s key market highlights.

Global Emerging Memory Technologies Market Geographical Landscape - Synopsis:

The report closely studies the growth trajectory of the global Emerging Memory Technologies It brings to light the global dominance of the leading regional segments, including North America, Asia Pacific, Europe, Latin America, and the Middle East & Africa.

The study elaborates on the crucial information pertaining to the regional market share. It simultaneously focuses on the significant details about the growth patterns of each regional market.

Moreover, the report encases an exhaustive geographical study of the market, emphasizing the business growth prospects and market barriers for each of the key market regions.

Market Scope:

One of the report’s central components is the broad Emerging Memory Technologies market segmentation that includes the product type gamut, application spectrum, end-user industry landscape, significant geographical regions, and the top market contenders. The report contains unbiased industry expert opinions on the current market scenario, past market performance, production & consumption rates, demand & supply ratio, and revenue generation forecasts over the estimated period. The key players’ financial positions, along with their gross profits, sales volumes, sales revenue, manufacturing costs, and other financial ratios, have been accurately gauged in the report. Furthermore, several analytical tools like investment assessment, SWOT analysis, and Porter’s Five Forces Analysis have been implemented by our analysts’ team to evaluate the production and distribution capacities of the Emerging Memory Technologies market players.

Major companies in the market report include Samsung Electronics Co. Ltd., Intel Corporation, International Business Machines (IBM) Corporation, SK Hynix Inc., Toshiba Corporation, Fujitsu Ltd., NEC Corporation, Micron Technology Inc., Powerchip Technology Corporation, and Macronix International Co. Ltd.

Emergen Research has segmented global emerging memory technologies on the basis of technology, application, and region:

Technology Outlook (Revenue, USD Billion; 2018–2028)

Volatile Memory

Non-Volatile Memory

NOR Flash Memory

NAND Flash Memory

Zero Capacitor Ram (ZRAM)

Dynamic Random-Access Memory (DRAM)

Static Random-Access Memory (SRAM)

Hybrid Memory Cube (HMC)

High-bandwidth Memory (HBM)

Magnetic Ram (MRAM)

Phase Change Memory (PRAM)

Ferroelectric Ram (FRAM)

Resistive Random-Access Memory (RRAM)

Spin-Transfer Torque Random-Access Memory (STT-RAM)

3D XPoint

Flash Memory or Electronically Erasable Programmable Read-Only Memory (EEPROM)

Application Outlook (Revenue, USD Billion; 2018–2028)

Computers

Consumer Electronics

Communication

Automotive

Industrial

Key Points of Emerging Memory Technologies Market:

Non-volatile memory segment is expected to register a substantially rapid revenue CAGR during the forecast period due to increased need for high-speed data transfer and ability of non-volatile memory to store data and operate without power or electricity.

North America market is expected to register a considerably large revenue share in the global emerging memory technologies market over the forecast period due to rapidly growing IT industry in the countries in the region.

In August 2019, Samsung Electronics Co. Ltd. announced the release its 6th generation V-NAND memory, which has 100 active layers and is enabled by revolutionary circuit design technology. Samsung\'s new V-NAND has lower latencies and consumes less power than previous-generation V-NAND products. This V-NAND is also more energy-efficient than its predecessors.

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[witherpro3355]

Dynamic Random Access Memory Market

[severetacoartisan]

“Semiconductor Memory IP Market” report provides a detailed analysis of global market size, regional and country-level market size, segmentation, market growth, market share, and competitive landscape.