#bipolar junction transistor

[addohaislam2000]

High voltage transistor, Switching applications, bipolar junction transistor

MMBT Series 25 V 50 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23

[hrbrte2wn]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mjd31ct4g-onsemi-6159837

Power supplies, Bipolar junction transistor, High voltage, Emergency lighting

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

[cllrk2ley]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mjd31ct4g-onsemi-5834395

Power Transistor, High voltage transistor, insulated gate bipolar transistor

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

[hrry2akker]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mjd31ct4g-onsemi-6159837

Surface Mount PNP Silicon Transistor, Emergency lighting, gate bipolar transistor

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

[jrry2gnns]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mjd31ct4g-onsemi-1072659

NPN bipolar transistor, Insulated gate bipolar transistor, Voltage regulators

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

[wlly2rley]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mmbta06lt1g-onsemi-9159854

Surface Mount NPN Silicon Transistor, Driver Transistor, what is transistor

MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23

[jhn22ddrr]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mmbta06lt1g-onsemi-7421506

Onsemi, MMBTA06LT1G, Transistors, Bipolar (BJT) Transistors

MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23

[addohaislam2000]

High voltage transistor, bipolar junction transistor, insulated gate transistor

MMBT Series 25 V 50 mA Surface Mount NPN Silicon Amplifier Transistor - SOT-23

[mchel2oa]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/si2309cds-t1-ge3-vishay-3122871

MOSFET transistors, Power MOSFET, bipolar junction transistors, mosfet module

SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3

[mrrk2acki]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/njvmjd31ct4g-onsemi-6177237

Switching applications, Bipolar transistor circuits, bipolar junction transistors

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

[jhhns2icee]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/pmbta45-215-nexperia-9009695

Explore Bipolar (BJT) Transistors, Darlington Transistors, Digital Transistors

PMBTA45 Series 500 V 0.15 A 300 mW NPN SMT Small Signal Transistor - SOT-23

[jeoe2azza]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/smmbta06lt1g-onsemi-8097919

What is transistor, Power transistor, Switching loads, Emergency lighting

MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23

[addohaislam2000]

What is a bipolar transistor, switching application, bipolar junction transistor

PBHV8215Z Series 150 V 2 A 0.73 W NPN High Voltage (BISS) Transistor - SOT-223

[abrt2deris]

Transistor switch, Schottky diode voltage drop, Reverse Voltage Schottky

BAT54W Series 30 V 600 mA Surface Mount Schottky Barrier Diode - SOT-323

[super-ion]

hi! i came across your account and am really curious about what the symbol in your pfp means? it's really cool

Hello! So I actually stumbled accross it a few years ago:

But it's a mashup of the transgender symbol and the electronic symbol for a certain kind of transistor

Mostly because I originally created this blog as part of a story about a transgender supervillain with tech powers. But also I'm trans and a diy electronics enthusiast

[materialsscienceandengineering]

Researchers develop high-performance heterojunction pn diodes

A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was published in Nano Letters. The research was led by Prof. Ye Jichun from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS), together with researchers from Zhengzhou University, Nanjing University, Harbin Institute of Technology, and Yongjiang Laboratory. Ultrawide bandgap semiconductors including Ga2O3 and diamond demonstrate notable potential for high-power applications due to their ultrawide bandgap, high breakdown field, radiation resistance, and carrier mobility. Bipolar devices, such as pn diodes and bipolar junction transistors, hold promising potential in the high-power electronics industry due to their ability to withstand reverse voltage currents.

Read more.