#Non-Volatile SRAM memory

[abr2tello]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45bvxi-infineon-6042923

Non-Volatile SRAM memory, Non-Volatile SRAM, Non volatile memory

CY62167EV30 Series 16 Mb (1M x 16/2M x 8) 2.2 - 3.6 V 45 ns Static RAM -TSOP-48

[egune2den]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62148ell-55sxit-infineon-7570237

Memory ICs, Random Access Memory, Fast asynchronous SRAM, low power SRAM

CY62148E Series 4 Mbit (512 K x 8) 5.5 - 5.5 V 55 ns Static RAM-SOIC-32

[glpu2mmr]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/as6c4008-55sintr-alliance-memory-6950125

SRAM memory, what is SRAM, flash memory card, non volatile memory

AS6C4008 Series 4-Mbit (512 K x 8) 3 V 55 ns CMOS Static RAM - SOIC-32

[rbrt2those]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45zxat-infineon-5174854

What is SRAM, static ram, nominal supply voltage, Types of Non Volatile RAM

CY62167EV30 Series 16 Mb (1M x 16/2M x 8) 2.2 - 3.6 V 45 ns Static RAM -TSOP-48

[phi2abbs]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45zxit-infineon-9160615

EEPROMs chips, Non volatile RAM memory, NV RAM memories, ram memory

CY62167EV30 Series 16 Mb (1M x 16/2M x 8) 2.2 - 3.6 V 45 ns Static RAM -TSOP-48

[gry2hade]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45zxi-infineon-9364399

Volatile memory, Computer memory, battery backed SRAM, ram memory

CY62167EV30 Series 16 Mb (1 M x 16/2 M x 8) 2.2 - 3.6 V 45 ns Static RAM-TSOP-48

[stnl2yobb]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45bvxit-infineon-8026254

SRAM memory card, SRAM memory chips, Static ram, SRAM memory

CY62167EV30 Series 16 Mb (1M x 16 / 2 M x 8) 3 V 45 ns Static RAM - FBGA-48

[bbob2reaa]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62167ev30ll-45bvxit-infineon-1068579

Non Volatile SRAM memory, What is SRAM, SRAM manufacturers, SRAM chip

CY62167EV30 Series 16 Mb (1M x 16 / 2 M x 8) 3 V 45 ns Static RAM - FBGA-48

[sull2chett]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--nvram--quantum-trap-nvsram/m95m02-drmn6tp-stmicroelectronics-7140290

SRAM chip, SRAM memory card, SRAM memory chips, static random access memory

M95M02 Series 2 Mb (256 K x 8) 5.5 V Serial SPI Bus EEPROM - SOIC-8

[lggn2tonn]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--nvram--quantum-trap-nvsram/m95m02-drmn6tp-stmicroelectronics-8011669

NV SRAM memory, nv ram, Parallel sram, non volatile memories, nonvolatile sram

M95M02 Series 2 Mb (256 K x 8) 5.5 V Serial SPI Bus EEPROM - SOIC-8

[egune2den]

https://www.futureelectronics.com/p/semiconductors--memory--RAM--static-ram--asynchronous/cy62148ell-55sxit-infineon-7570237

Memory ICs, Random Access Memory, Fast asynchronous SRAM, low power SRAM

CY62148E Series 4 Mbit (512 K x 8) 5.5 - 5.5 V 55 ns Static RAM-SOIC-32

[frnk2todd]

https://www.futureelectronics.com/p/semiconductors--memory--storage--embedded-storage/emmc04g-mt32-01g02-kingston-3178976

What Is Nand Flash Memory, Non volatile memory, Flash memory manufacturers

4GB I-temp eMMC 5.1 (HS400) 153FBGA 4GB5.1 11.5x13x0.8

[industrystudyreport]

Are You Ready? The Field Programmable Gate Array Market is Exploding!

Field Programmable Gate Array (FPGA) Industry Overview

The global Field Programmable Gate Arrays (FPGAs) Market was valued at $10.46 billion in 2022 and is projected to expand at an annual rate of 10.8% from 2023 to 2030. The increasing adoption of field programmable gate arrays in applications such as deep packet inspection, network processing, and security is expected to fuel their demand throughout the forecast period. The preference for FPGA architecture is growing due to its advantages, including low power consumption and high compute density. This trend is being driven by the rising need for efficient data flow and streaming data processing across various applications. For example, in February 2022, QuickLogic Corporation introduced PolarPro 3 to address the shortage of low-power FPGAs. This product is designed for ultra-low power consumption, making it ideal for wearables, handheld devices, and mobile applications. Such product launches by key industry players are anticipated to drive market growth over the forecast period.

Detailed Segmentation:

Type Insights

Mid-range FPGAs are expected to register the highest CAGR of 12.5% over the forecast period, owing to the properties offered by the segment such as low power consumption, small form factor, and high performance for FPGA-based devices. In addition, the advantages of the mid-range type segment that are capable of delivering a significant digital signal processing (DSP) along with embedded memory to logic ratio that enhances the intelligence for several applications is anticipated to drive the segment growth.

Application Insights

The military and aerospace segment is expected to expand at the fastest CAGR of 12.7% over the forecast period. Emergence of embedded field programmable gate array has particularly favored the aviation and defense industry by offering even better integration, reliability, and low power option over the traditional FPGAs, which is expected to drive the military and aerospace segment growth during the forecast period.

Technology Insights

Flash-based FPGAs are expected to register the fastest growth rate of 11.3% over the forecast period. The segment is witnessing high demand as major players upgrade their portfolios of FPGAs to cater to the growing demand from the expanding application base. Additionally, the rising trend favoring flash-based FPGAs over SRAM-based FPGAs due to their lower power consumption is also boosting the segment growth. The utilization of non-volatile flash memory for configuration storage eliminates the need for continuous power, aligning with the industry's emphasis on energy efficiency and power optimization. This power-saving feature is particularly advantageous in battery-powered devices, portable electronics, and energy-constrained applications, which is expected to drive the market growth over the forecast period.

Regional Insights

The South America region is expected to register a significant growth rate of 11.9% over the forecast period. This growth is attributed to the boost in the automobile, industrial, and aerospace sector, where the application of FPGA-based solutions is substantial, especially in Brazil. In addition, the growing demand for connectivity in the region is expected to augment the adoption of advanced telecommunications infrastructure along with the expansion of broadband networks, which is expected to drive the growth of the field programmable gate array market across the region.

Gather more insights about the market drivers, restraints, and growth of the Field Programmable Gate Array (FPGA) Market

Key Companies & Market Share Insights

The market is classified as highly competitive, with the presence of several field programmable gate array market players. The key players operating in the field programmable gate array industry are focusing on strategic alliances, mergers & acquisitions, expansion, and product development to remain competitive in the industry. For instance, in May 2023, Intel Corporation launched their new FPGAs, the Agilex 7 FPGAs with R-Tile. This product from the company is expected to be the first FPGA with CXL and PCIe 5.0 capabilities. Such developments are expected to propel the field programmable gate array market growth over the forecast period. Some of the major players in the global field programmable gate array (FPGA) market:

Intel Corporation

Xilinx, Inc.

Qualcomm Technologies, Inc.

NVIDIA Corporation

Broadcom

AMD, Inc.

Quicklogic Corporation

Lattice Semiconductor Corporation

Achronix Semiconductor Corporation

Microchip Technology Inc.

Order a free sample PDF of the Market Intelligence Study, published by Grand View Research.

[caingdanilo]

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400 picoseconds (0.0000000004 s) — roughly 25 billion operations per second. The result, published today in Nature, pushes non‑volatile memory to a speed domain previously reserved for the quickest volatile memories and sets a benchmark for data‑hungry AI hardware. 

Smashing the speed ceiling

Conventional static and dynamic RAM (SRAM, DRAM) write data in 1–10 nanoseconds but lose everything when power is cut. Flash chips, by contrast, hold data without power yet typically need micro‑ to milliseconds per write — far too slow for modern AI accelerators that shunt terabytes of parameters in real time.

The Fudan group, led by Prof. Zhou Peng at the State Key Laboratory of Integrated Chips and Systems, re‑engineered flash physics by replacing silicon channels with two‑dimensional Dirac graphene and exploiting its ballistic charge transport. 

By tuning the “Gaussian length” of the channel, the team achieved two‑dimensional super‑injection, which is an effectively limitless charge surge into the storage layer that bypasses the classical injection bottleneck.

“Using AI‑driven process optimization, we drove non‑volatile memory to its theoretical limit,” Zhou told Xinhua, adding that the feat “paves the way for future high‑speed flash memory.”

One billion cycles in a blink

Co‑author Liu Chunsen likens the breakthrough to shifting from a U‑disk that writes 1,000 times per second to a chip that fires 1 billion times in the blink of an eye. The previous world record for non‑volatile flash programming speed was about two million operations per second.

Because PoX is non‑volatile, it retains data with no standby power, a critical property for next‑generation edge AI and battery‑constrained systems. Combining ultra‑low energy with picosecond write speeds could remove the long‑standing memory bottleneck in AI inference and training hardware, where data shuttling, not arithmetic, now dominates power budgets.

Industrial and strategic implications

Flash memory remains a cornerstone of global semiconductor strategy thanks to its cost and scalability. Fudan’s advance, reviewers say, offers a “completely original mechanism” that may disrupt that landscape. 

If mass‑produced, PoX‑style memory could eliminate separate high‑speed SRAM caches in AI chips, slashing area and energy. It can enable instant‑on, low‑power laptops and phones, and support database engines that hold entire working sets in persistent RAM. 

The device can also strengthen China’s domestic drive to secure leadership in foundational chip technologies. The team did not disclose endurance figures or fabrication yield, but the graphene channel suggests compatibility with existing 2D‑material processes that global fabs are already exploring. “Our breakthrough can reshape storage technology, drive industrial upgrades and open new application scenarios,” Zhou said.

What happens next

Fudan engineers are now scaling the cell architecture and pursuing array‑level demonstrations. Commercial partners have not been named, but Chinese foundries are racing to integrate 2D materials with mainstream CMOS lines.